Modeling voids in silicon

We propose a model for void evolution in Silicon (Si). Si samples were implanted with high energy Si ions. We considered the release of vacancies from the voids to be the rate limiting step for the dissolution of the voids and we account for faster dissolution of smaller voids. The model predicted well the depth distribution of the voids and the evolution of voids under varying anneal temperatures with varying anneal times. We were able to fit the experimental data using a consistent set of fitting parameters and excellent fits were obtained in all the cases.