One Dimensional Aluminum Nitride Nanostructures: Synthesis, Structural, and Luminescence Properties

Aluminum nitride (AIN) is a direct bandgap semiconductor with a bandgap about 6.1 eV at room temperature, the largest among semiconductors. This paper emphasizes experimental results of the growth and optical properties of AIN nanostructures by direct nitridation. The nitridation process was performed by chemical vapor deposition method with nitrogen (N2) gas flow. AIN nanostructures were analyzed by scanning electron microscope (SEM) equipped …