Dopant profiling and surface analysis of silicon nanowires using capacitance–voltage measurements

Silicon nanowires are expected to have applications in transistors, sensors, resonators, solar cells and thermoelectric systems1,2,3,4,5. Understanding the surface properties and dopant distribution will be critical for the fabrication of high-performance devices based on nanowires6. At present, determination of the dopant concentration depends on a combination of experimental measurements of the mobility and threshold voltage7,8 in a nanowire …