The impact of noise parameter de-embedding on the high-frequency noise modeling of MOSFETs

This paper discusses the impact of noise parameter de-embedding in n-MOSFETs. A method to directly de-embed the parasitic pad effects from the measured noise parameters (minimum noise figure NF/sub min/, equivalent noise resistance R/sub n/, and optimized source reflection coefficient /spl Gamma//sub opt/) and the impact of noise parameter de-embedding on the high-frequency noise modeling of MOSFETs is presented. In addition, noise parameter de-embedding using a physically-based pad model is presented. Finally, the results of the two approaches are compared.