Conference
Frozen Noise Origin of Temporal Low-Frequency Noise in Electronic Devices
Abstract
In this work, we show that the 1/f noise can originate from temporal accumulation of structural variance in electronic devices. We compare results of our calculations to published data and we critically discuss the advantages and limitations relevant to the use of the spatial variations for explanation of the low-frequency noise in MOS transistors.
Authors
Marinov O; Deen MJ
Pagination
pp. 158-161
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
June 1, 2011
DOI
10.1109/icnf.2011.5994288
Name of conference
2011 21st International Conference on Noise and Fluctuations