Conference
A Novel Method for Bonding of Ionic Wafers
Abstract
A novel method for bonding sapphire, LiNbO3, quartz and glass wafers with silicon using the modified surface activated bonding (SAB) method is described. In this method, the mating surfaces were cleaned and nano-adhesion Fe layers were deposited using a low energy argon ion beam simultaneously. The optical images show that the entire area of 4-inch wafers of LiNbO3/Si was bonded. Such images for other samples show particle induced voids across …
Authors
Howlader MR; Suga T; Kim MJ; Itoh N; Deen J; Mascher P
Pagination
pp. 552-558
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
January 1, 2006
DOI
10.1109/ectc.2006.1645703
Name of conference
56th Electronic Components and Technology Conference 2006