Electron Cyclotron Resonance Plasma Chemical Vapour Deposition of Silicon Carbide Thin Films Using Ditertiary Butyl Selane

Silicon carbide films were deposited by electron cyclotron resonance plasma chemical vapour deposition, using Ditertiary Butyl Silane (SiH2(C4H9)2), a non-corrosive organic compound, liquid at room temperature and stable in air, as precursor. Depositions were carried out in an Ar/H2 plasma at relatively low temperatures, below 400 °C. The influence of deposition parameters such as substrate temperature, gas flow rates, pressure, and microwave power, was systematically investigated and related to the Si:C ratios and the refractive index. The film composition was measured by Auger electron spectroscopy and the surface morphology was examined by scanning electron microscopy. The deposition rates and refractive indexes were extracted from the conventional ellipsometric functions, psi and delta. The results show that high quality silicon carbide of variable Si:C ratios and with very low levels of impurities are obtained.