X-ray absorption of As low-energy ion implanted into Si(100) grown by molecular-beam epitaxy

Information about the local environment of dopants in semiconductor materials is required to understand and help optimize the electrical activity in highly doped samples. The near-edge (XANES) and extended x-ray absorption fine structure (EXAFS) components of x-ray absorption spectra provide detailed information on local geometric and electronic structure about selected atoms. Electron yield and fluorescence detection of As K EXAFS and XANES, …