Conference
Optical and electrical properties of electron cyclotron resonance chemical vapour-deposited SiNx:H films
Abstract
Silicon nitride (SiN x :H) films were deposited on both InP and Si substrates at temperatures ranging from room temperature to 400 °C by electron cyclotron resonance (ECR) plasma chemical-vapour deposition. The silicon source used was ditertiary butyl silane (SiH 2 (C 4 H 9 ) 2 ) that was activated by ECR plasmas composed of nitrogen alone or in combination with hydrogen or argon. The effects of various deposition parameters on the film …
Authors
Boudreau M; Boumerzoug M; Kruzelecky RV; Mascher P; Jessop PE; Thompson DA
Volume
70
Pagination
pp. 1104-1108
Publisher
Canadian Science Publishing
Publication Date
October 1, 1992
DOI
10.1139/p92-178
Conference proceedings
Canadian Journal of Physics
Issue
10-11
ISSN
0008-4204