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Electron Cyclotron Resonance CVD of Silicon...
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Electron Cyclotron Resonance CVD of Silicon Oxynitride for Optoelectronic Applications

Abstract

Silicon oxynitrides with compositions varying from Si2N4 to SiO2 were deposited on silicon substrates by electron cyclotron resonance plasma enhanced chemical vapour deposition (ECR-PECVD). The silicon source used is an organic liquid, Tris Dimethyl Amino Silane (trade name SiN − 1000™). Optical emission spectroscopy is used to characterize the ECR plasma, this information then is correlated with the optical properties of the deposited film, as …

Authors

Boudreau M; Boumerzoug M; Kruzelecky RV; Mascher P; Jessop PE; Thompson DA

Volume

300

Pagination

pp. 183-188

Publisher

Springer Nature

Publication Date

December 1993

DOI

10.1557/proc-300-183

Conference proceedings

MRS Advances

Issue

1

ISSN

2731-5894