Journal article
Semiconductor optical amplifiers grown on a metamorphic substrate for long wavelength applications
Abstract
A semiconductor optical amplifier is grown on an InAsP metamorphic substrate to extend the long wavelength accessibility of the amplifier. The amplifier is shown to produce gain at wavelength exceeding 1640 nm while containing large tensile strain in the quantum wells. Also a laser diode is fabricated from the same device structure.
Authors
Czaban JA; Thompson DA
Journal
Nanotechnology, Vol. 21, No. 13,
Publisher
IOP Publishing
Publication Date
April 2, 2010
DOI
10.1088/0957-4484/21/13/134005
ISSN
0957-4484