selected scholarly activity
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chapters
- Radiation-induced desorption of hydrogen and deuterium from candidate plasma-facing materials. 323-326. 1997
- Implantation isolation in n-type InP bombarded with He+ and B+. 294-297. 1996
- Volatile products and endpoint detection in reactive ion etching of III–V compounds with a broad beam ECR source. 179-182. 1996
- ATTEMPTS TO REDUCE THE OXYGEN OVERPOTENTIAL OF Ni ANODES USING ION BEAM MIXING AND ION IMPLANTATION TECHNIQUES. 46-54. 1982
- STOPPING POWERS AND BACKSCATTERED CHARGE FRACTIONS FOR 20–150 keV H+ AND He+ ON GOLD. 63-68. 1980
- Nitrogen Implantation in SiC: Lattice Disorder and Foreign-Atom Location Studies. 291-298. 1975
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conferences
- Modelling and experimental investigation of a current to pressure converter. Proceedings of 2012 UKACC International Conference on Control. 574-578. 2012
- Aberration-corrected STEM and EELS of semiconducting nanostructures. Journal of Physics: Conference Series. 012007-012007. 2011
- Direct measurement of the inter-diffusion in quantum wells enhanced by group V intermixing for InP- based structures. 2006 Conference on Optoelectronic and Microelectronic Materials and Devices. 78-81. 2006
- Optical and structural properties of InAs quantum dots emitting near 1.5 μm grown on a GaAs substrate with an In<sub>x</sub>Ga<sub>1-x</sub>AS metamorphic buffer layer. 2006 Conference on Optoelectronic and Microelectronic Materials and Devices. 176-178. 2006
- Growth and characterization of GaAsSb metamorphic samples on an InP substrate. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 587-590. 2006
- Rapid thermal annealing of InAs∕GaAs quantum dots with a low-temperature-grown InGaP cap layer. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 700-703. 2006
- Quantitative compositional analysis of quantum well intermixing using a low temperature MBE‐grown InP cap layer. Physica Status Solidi C: Current Topics in Solid State Physics. 647-650. 2006
- Influence of the annealing temperature on the optical transitions of InGaAsP‐based quantum well structures investigated by photoreflectance spectroscopy. Physica Status Solidi (A) Applications and Materials. 1263-1269. 2005
- Evolution of composition modulations in InGaAs/InGaAsP quantum well structures due to quantum well intermixing. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 179-180. 2005
- Use of a Small Lattice Mis-Matched Metamorphic Substrate to Extend the Wavelength Range of a Broadband, Polarization Insensitive Semiconductor Optical Amplifier. Conference on Optoelectronic and Microelectronic Materials and Devices, 2004.. 37-40. 2005
- Broadband polarization-insensitive semiconductor optical amplifiers. Proceedings of SPIE - The International Society for Optical Engineering. 65-72. 2004
- Investigation of dielectric cap induced intermixing of InxGa1−xAsyP1−y/InP quantum well laser structures by photoreflectance and photoluminescence. Materials Science & Engineering B: Solid-State Materials for Advanced Technology. 137-141. 2003
- Photoreflectance study of changes in the QW profile of 1.55-micrometer laser structure induced by SiO2 cap layers. Materials Science & Engineering B: Solid-State Materials for Advanced Technology. 232-235. 2003
- Photoreflectance study of the interdiffusion effects in the InGaAsP-based quantum well laser structures. Physica E: Low-Dimensional Systems and Nanostructures. 602-603. 2003
- Investigation of the Non-Square InGaAsP/InP Quantum Wells in the Electric Field by Photoreflectance. Acta Physica Polonica A. 649-657. 2002
- Control of dielectric cap induced band-gap shift in 1.55 μm laser structures. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 1076-1078. 2002
- Impurity-free intermixing in compressively strained InGaAsP multiple quantum well structures. Materials Science in Semiconductor Processing. 621-624. 2001
- Two-section tunable laser using impurity free intermixing in InGaAsP multiple quantum well structures. Proceedings of SPIE - The International Society for Optical Engineering. 227-236. 2001
- <title>Quantum well infrared detection devices</title>. Proceedings of SPIE - The International Society for Optical Engineering. 130-140. 2001
- Dual-band photodetectors based on interband and intersubband transitions. Infrared Physics and Technology. 163-170. 2001
- Demonstration of a DFB laser with an integrated electro-absorption modulator produced using a novel quantum-well intermixing technique. Materials Science & Engineering B: Solid-State Materials for Advanced Technology. 232-235. 2001
- Characterization of defects in InGaAsN grown by molecular-beam epitaxy. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 280-283. 2001
- New methods of defect-enhanced quantum well intermixing and demonstrated integrated distributed-feedback laser modulator. Proceedings of SPIE - The International Society for Optical Engineering. 148-161. 2000
- Optical quality of InGaAsN/GaAs. Proceedings of SPIE - The International Society for Optical Engineering. 18-27. 2000
- Growth of novel InP-based materials by He-plasma-assisted epitaxy. Journal of Crystal Growth. 237-241. 2000
- A high-speed photodetector based on He-plasma assisted MBE grown InGaAsP. Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Edition. CLEO '99. Conference on Lasers and Electro-Optics (IEEE Cat. No.99CH37013). 124-125. 1999
- Ion beam analysis of deuterium-implanted Al2O3 and tungsten. Journal of Nuclear Materials. 1109-1113. 1998
- Thermal desorption analysis of beryllium tile pieces from JET. Journal of Nuclear Materials. 1114-1119. 1998
- Characterization of annealed high-resistivity InP grown by He-plasma-assisted epitaxy. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 772-775. 1998
- Analysis of two asymmetric multiquantum well InGaAsP laser structures. Technical Digest. Summaries of Papers Presented at the Conference on Lasers and Electro-Optics. Conference Edition. 1998 Technical Digest Series, Vol.6 (IEEE Cat. No.98CH36178). 236-237. 1998
- Molecular beam epitaxial growth of quantum wires on V-grooved InP substrates with (1 1 1) sidewalls. Journal of Crystal Growth. 793-798. 1997
- Electrical characterization of high resistivity InP and optically fast (sub-picosecond) InGaAsP grown by He-plasma-assisted epitaxy. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 70-73. 1997
- InP-InAlAs and InGaP-InAlAs mixed spacers to reduce the gate leakage current in InAlAs/InGaAs/InP HEMTs. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 384-387. 1997
- Subpicosecond carrier lifetime in beryllium-doped InGaAsP grown by He-plasma-assisted molecular beam epitaxy. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. 223. 1997
- Subpicosecond carrier lifetime in beryllium-doped InGaAsP grown by He-plasma-assisted molecular beam epitaxy. Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series. 79-80. 1997
- A three-terminal N-channel InGaAsP–InP-based double heterostructure optoelectronic switch (DOES). Canadian Journal of Physics. 16-19. 1996
- Schottky contacts to GaxIn1−xP barrier enhancement layers on InP and InGaAs. Canadian Journal of Physics. 104-107. 1996
- Analysis of the uniformity of the localized area epitaxy by spectrally resolved scanning photoluminescence. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 23-26. 1996
- Composition variation of InGaAsP grown on (111)B faceted V-groove InP substrates by gas source molecular beam epitaxy. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 511-514. 1996
- Contactless Electroreflectance Study of InxGa1-xAs/InP Multiple Quantum Well Structures Including the Observation of Surface/Interface Electric Fields. Materials Research Society Symposium - Proceedings. 481-486. 1996
- Effect of noble gas plasmas on the growth of InP by gas-source molecular beam epitaxy. ION BEAM MODIFICATION OF MATERIALS. 769-772. 1996
- Evaluation of localized area epitaxy by spectrally resolved scanning photoluminescence. Institute of Physics Conference Series. 251-256. 1996
- Growth of ternary and quaternary compounds on non-planar InP substrates. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 515-516. 1996
- Implantation isolation in n-type InP bombarded with He+ and B+ (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 294-297, 1995). ION BEAM MODIFICATION OF MATERIALS. 294-297. 1996
- Improved structural and optical properties of InGaAsP grown on InP by ECR plasma-assisted epitaxy. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 517-520. 1996
- Ion implantation induced compositional intermixing in the InGaAs/InP MQW system for wavelength shifted waveguides. ION BEAM MODIFICATION OF MATERIALS. 461-465. 1996
- Volatile products and endpoint detection in reactive ion etching of III-V compounds with a broad beam ECR source (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 179-182, 1995). ION BEAM MODIFICATION OF MATERIALS. 179-182. 1996
- Implantation isolation in n-type InP bombarded with He+ and B+. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 294-297. 1995
- Ion implantation induced compositional intermixing in the MQW system for wavelength shifted waveguides. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 461-465. 1995
- Volatile products and endpoint detection in reactive ion etching of III–V compounds with a broad beam ECR source. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 179-182. 1995
- A comparative study of the low frequency noise in InP based heterojunction field effect transistors (HFETs). Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 385-388. 1995
- An investigation into gas source molecular beam epitaxy deposition onto non-planar InP patterned substrates. Institute of Physics Conference Series. 231-234. 1995
- Investigation of a molecular beam epitaxy regrowth procedure using an in-situ H/sub 2/ plasma probed with an InP/InGaAs/InP quantum well. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 202-205. 1995
- Spacer design to improve the breakdown voltage of InAlAs-InGaAs HEMTs. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 420-423. 1995
- Spinodal-like decomposition of InGaAsP/InP grown by gas source molecular beam epitaxy. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 175-178. 1995
- Transmission electron microscopy and photoluminescence studies of In1-xGaxAsyP1-y films grown on <100> InP substrates. Institute of Physics Conference Series. 253-256. 1995
- The effects of surface contamination on absorption and desorption of deuterium in beryllium and beryllium oxide. Journal of Nuclear Materials. 942-947. 1994
- In-situ monitoring of electron cyclotron resonance plasma chemical vapour deposition of hydrogenated silicon nitride films. Surface and Coatings Technology. 77-81. 1993
- Emerging technologies in magnetic storage (invited) (abstract). Journal of Applied Physics. 5763-5763. 1993
- Application of an in situ hydrogen plasma to the epitaxial regrowth of InP grown by molecular beam epitaxy. Journal of Vacuum Science and Technology B. 985-988. 1993
- Molecular-beam epitaxially grown InP/InGaAsP heterostructure for inversion-channel devices. Journal of Vacuum Science and Technology B. 979-981. 1993
- Application of surface passivation techniques and an in-situ hydrogen plasma for regrowth of InP by GSMBE. 1993 (5th) International Conference on Indium Phosphide and Related Materials. 95-98. 1993
- Characterization of InGaAs/Inp Epitaxial Layers Grown Over V-Groove Patterned Inp Substrates Using Gas Source Molecular Beam Epitaxy. Materials Research Society Symposium - Proceedings. 39-44. 1993
- Electron Cyclotron Resonance CVD of Silicon Oxynitride for Optoelectronic Applications. Materials Research Society Symposium - Proceedings. 183-188. 1993
- High Resistivity in N-Type InP and InGaAsP by He+ Ion Induced Amorphization.. Materials Research Society Symposium - Proceedings. 117-122. 1993
- Hydrocarbon Ecr Reactive Ion Etching of III-V Semiconductors with Sims Plasma Probe Diagnostics. Materials Research Society Symposium - Proceedings. 323-328. 1993
- Refractory Metal Contacts to N-Type InP and InGaAs. Materials Research Society Symposium - Proceedings. 233-238. 1993
- THERMAL-DESORPTION OF IMPLANTED HELIUM FROM BERYLLIUM. IEA IMPLEMENTING AGREEMENT FOR A PROGRAMME OF RESEARCH AND DEVELOPMENT ON FUSION MATERIALS. 331-341. 1993
- Electrical characterization of rf sputtered TiN thin films on III–V semiconductors. Canadian Journal of Physics. 1076-1081. 1992
- Optical and electrical properties of electron cyclotron resonance chemical vapour-deposited SiNx:H films. Canadian Journal of Physics. 1104-1108. 1992
- Strain-induced compositional shift in the growth of InAsyP1−y onto (100) InP by gas-source molecular beam epitaxy. Canadian Journal of Physics. 886-892. 1992
- Study of thermal desorption of UV/ozone oxide on InP. Canadian Journal of Physics. 1043-1049. 1992
- Thermal absorption and desorption of deuterium in beryllium and beryllium oxide. Journal of Nuclear Materials. 263-267. 1992
- Effect of surface pre-treatments on carrier depletion at growth-interrupted p-type InP interfaces for laser structures grown by GSMBE. LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels. 121-124. 1992
- THE USE OF AN INSITU ECR HYDROGEN PLASMA TO REMOVE THE OXIDE FROM INP SUBSTRATES PRIOR TO EPITAXIAL-GROWTH. FOURTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS. 90-92. 1992
- The use of an in-situ ECR hydrogen plasma to remove the oxide from InP substrates prior to epitaxial growth. LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels. 90-92. 1992
- Deuterium diffusion, trapping and release in ion-implanted beryllium. Fusion Engineering and Design. 419-424. 1991
- Ion-beam damage to quartz crystals. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 180-184. 1990
- The Effects of Ion Beam Mixing on Rapid Thermal Annealed Ohmic Contacts to N-GaAs. Materials Research Society Symposium - Proceedings. 351-356. 1990
- Variations in surface morphology of ion implanted InP after rapid thermal annealing. International Conference on Indium Phosphide and Related Materials. 409-413. 1990
- Solid Phase Epitaxy of Si1-xGex on Si Strained Layers. Materials Research Society Symposium - Proceedings. 353-357. 1989
- ION-BEAM MIXING TO PRODUCE NI-PD SURFACE ALLOYS. Journal of Metals. A21-A21. 1985
- ION-BEAM MIXING TO PRODUCE PT-FE ALLOYS. Journal of Metals. A45-A45. 1985
- ION-BEAM PROCESSING TO INCREASE THE OXIDATION RESISTANCE OF FE-AL ALLOYS. Journal of Metals. A45-A45. 1985
- RECRYSTALLIZATION AND REORIENTATION OF NI FILMS INDUCED BY ION-IMPLANTATION. Journal of Metals. A45-A45. 1985
- ION BOMBARDMENT DAMAGE IN alpha -QUARTZ AT 50-295 K.. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 176-182. 1983
- SPUTTERING OF FROZEN XENON BY kev HEAVY IONS.. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 315-320. 1983
-
LARGE ANGLE DIFFERENTIAL SCATTERING CROSS-SECTIONS FOR VARIOUS IONS (2 less than equivalent to Z
1 less than equivalent to 10) IN THE 65-135 keV ENERGY RANGE.. Nuclear Instruments & Methods in Physics Research. 495-499. 1981 - DEPOSITION OF GOLD ONTO SILICON SURFACES AND SUBSEQUENT REDISTRIBUTION DURING THERMAL TREATMENTS.. 683-691. 1973
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journal articles
- Sampling optimization of Moiré geometrical phase analysis for strain characterization in scanning transmission electron microscopy. Ultramicroscopy. 209:112858-112858. 2020
- Multispectral absorptance from large-diameter InAsSb nanowire arrays in a single epitaxial growth on silicon. Nano Futures. 1:035001-035001. 2017
- Growth and kinetic Monte Carlo simulation of InAs quantum wires on vicinal substrates. Journal of Crystal Growth. 412:87-94. 2015
- Comparison of different grading approaches in metamorphic buffers grown on a GaAs substrate. Journal of Crystal Growth. 386:183-189. 2014
- Size Distribution, Imaging and Growth Mechanisms of Self-Assembled InAs Quantum Wires on Vicinal Substrates. Microscopy and Microanalysis. 19:348-349. 2013
- Investigation of cross-hatch in In0.3Ga0.7As pseudo-substrates. Journal of Applied Physics. 113. 2013
- Publisher’s Note: “Effect of layer separation, InAs thickness, and rapid thermal annealing on the optical emission from a multi-layer quantum wire structure” [J. Appl. Phys. 109, 124311 (2011)]. Journal of Applied Physics. 110. 2011
- Effect of layer separation, InAs thickness, and rapid thermal annealing on the optical emission from a multi-layer quantum wire structure. Journal of Applied Physics. 109. 2011
- Stacking pattern of multi-layer InAs quantum wires embedded in In0.53Ga0.47−xAlxAs matrix layers grown lattice-matched on InP substrate. Journal of Crystal Growth. 312:2637-2646. 2010
- InAs quantum wire induced composition modulation in an In0.53Ga0.37Al0.10As barrier layer grown on an InP substrate. Journal of Applied Physics. 108. 2010
- Photocurrent Modeling and Detectivity Optimization in a Resonant-Tunneling Quantum-Dot Infrared Photodetector. IEEE Journal of Quantum Electronics. 46:849-859. 2010
- Electrical characteristics of core–shell p–n GaAs nanowire structures with Te as the n-dopant. Nanotechnology. 21:134007-134007. 2010
- Semiconductor optical amplifiers grown on a metamorphic substrate for long wavelength applications. Nanotechnology. 21:134005-134005. 2010
- Experimental characterization and theoretical modeling of the strain effect on the evolution and interband transitions of InAs quantum dots grown on InxGa1−xAs (0.0⩽x⩽0.3) metamorphic pseudosubstrates on GaAs wafers. Journal of Applied Physics. 106. 2009
- Quantitative compositional analysis and strain study of InAs quantum wires with InGaAlAs barrier layers. Journal of Applied Physics. 105. 2009
- Quantitative compositional profiles of enhanced intermixing in GaAs/AlGaAs quantum well heterostructures annealed with and without a SiO2cap layer. Semiconductor Science and Technology. 24:045015-045015. 2009
- Quantum well intermixing of a quantum well structure grown on an InAsP metamorphic pseudosubstrate on InP. Journal of Applied Physics. 105. 2009
- Extraction of Electron and Hole Ionization Coefficients From Metamorphically Grown InGaSb Diodes. IEEE Transactions on Electron Devices. 56:523-528. 2009
- GaAs Core−Shell Nanowires for Photovoltaic Applications. Nano Letters. 9:148-154. 2009
- The response of semiconductor optical amplifiers containing lateral composition modulation in the quantum wells. Journal of Applied Physics. 104. 2008
- The consequence of lateral composition modulation on the anisotropic emission for transitions to the heavy hole subbands in InGaAs quantum wells. Journal of Applied Physics. 104. 2008
- Theoretical modeling of dark current in quantum dot infrared photodetectors using nonequilibrium Green’s functions. Journal of Applied Physics. 104. 2008
- Tilt generation in step-graded InxGa1−xAs metamorphic pseudosubstrate on a singular GaAs substrate using a low-temperature grown InGaP interlayer. Journal of Applied Physics. 103. 2008
- Effect of growth temperature on InGaSb metamorphic layers and the fabrication of InGaSb p-i-n diodes. Journal of Vacuum Science and Technology B. 26:636-642. 2008
- Comparison of Quantum Well Interdiffusion on Group III, Group V, and Combined Groups III and V Sublattices in GaAs-Based Structures. IEEE Journal of Selected Topics in Quantum Electronics. 14:1104-1112. 2008
- Spectral function and responsivity of resonant tunneling and superlattice quantum dot infrared photodetectors using Green’s function. Journal of Applied Physics. 102. 2007
- Compositional Analysis in InAs/InGaAlAs/InP Quantum Wire Structures with Electron Energy Loss Spectroscopy. Microscopy and Microanalysis. 13:1270-1271. 2007
- Probing the indium clustering in InGaAs∕GaAs quantum wells by room temperature contactless electroreflectance and photoluminescence spectroscopy. Journal of Applied Physics. 101. 2007
- Improved InAsP metamorphic layers grown on an InP substrate using underlying InP grown at low temperatures. Semiconductor Science and Technology. 22:408-412. 2007
- RIE of GaSb with an ECR Source Using Methane/Hydrogen Chemistry in an Argon Plasma. Journal of the Electrochemical Society. 154:H127-H127. 2007
- Spectral function of InAs∕InGaAs quantum dots in a well detector using Green’s function. Journal of Applied Physics. 100. 2006
- Quantitative analysis of compositional changes in InGaAs∕InGaAsP quantum wells on GaAs induced by intermixing with a low temperature grown InGaP cap layer. Applied Physics Letters. 89. 2006
- Comparison of quantum well intermixing in GaAs structures using a low temperature grown epitaxial layer or a SiO2 cap. Journal of Applied Physics. 100. 2006
- Photoreflectance investigations of quantum well intermixing processes in compressively strained InGaAsP∕InGaAsP quantum well laser structures emitting at 1.55μm. Journal of Applied Physics. 100. 2006
- The effect of different proximity caps on quantum well intermixing in InGaAsP/InP QW structures. Semiconductor Science and Technology. 21:870-875. 2006
- The influence of lateral composition modulation on the photoluminescence of tensile strained InGaAs quantum wells at room temperature. Journal of Applied Physics. 99. 2006
- Influence of facet coating on the dual wavelength operation of asymmetric InGaAs-GaAs quantum-well lasers. IEEE Journal of Quantum Electronics. 41:625-629. 2005
- Thermal stability of 1.55 μm quantum well laser structures grown by gas-source molecular beam epitaxy. Materials Science & Engineering B: Solid-State Materials for Advanced Technology. 103:227-232. 2003
- Quantum well intermixing in InGaAsP laser structures using a low temperature grown InP cap layer. Semiconductor Science and Technology. 18:782-787. 2003
- Quantum well intermixing enhanced by InP grown by He-plasma assisted GaS source MBE. Semiconductor Science and Technology. 18:535-540. 2003
- Controlled group V intermixing in InGaAsP quantum well structures and its application to the fabrication of two section tunable lasers. Journal of Applied Physics. 92:4330-4335. 2002
- Intermixing of InGaAsP/InGaAsP quantum-well structures using dielectric films. Semiconductor Science and Technology. 16:986-991. 2001
- Enhanced band-gap blueshift due to group V intermixing in InGaAsP multiple quantum well laser structures induced by low temperature grown InP. Applied Physics Letters. 78:3199-3201. 2001
- Characterization of defects in doped InGaAsN grown by molecular-beam epitaxy. Applied Physics Letters. 78:1694-1696. 2001
- The effects of InP grown by He-plasma assisted epitaxy on quantum-well intermixing. IEEE Journal of Quantum Electronics. 37:426-429. 2001
- An ultrafast all-optical asymmetric Fabry-Perot switch based on bulk Be-doped InGaAsP grown by He-plasma-assisted epitaxy. Optical and Quantum Electronics. 33:1055-1062. 2001
- Enhanced bandgap blue-shift in InGaAsP multiple-quantum-well laser structures by low-temperature-grown InP. Semiconductor Science and Technology. 15:L41-L43. 2000
- Ultrafast carrier dynamics in InGaAsP grown by He-plasma-assisted epitaxy. Optics Communications. 185:487-492. 2000
- Refractive indices of InGaAsP lattice-matched to GaAs at wavelengths relevant to device design. Applied Physics Letters. 76:2791-2793. 2000
- Effect of barrier thickness on the carrier distribution in asymmetric multiple-quantum-well InGaAsP lasers. IEEE Photonics Technology Letters. 12:134-136. 2000
- Optical properties of InGaAsP lattice matched to GaAs. Conference on Lasers and Electro-Optics (CLEO 2000). Technical Digest. Postconference Edition. TOPS Vol.39 (IEEE Cat. No.00CH37088). 313-314. 2000
- Ultrafast all-optical asymmetric Fabry-Perot switch based on bulk beryllium-doped InGaAsP grown by He-plasma-assisted epitaxy. Conference on Lasers and Electro-Optics (CLEO 2000). Technical Digest. Postconference Edition. TOPS Vol.39 (IEEE Cat. No.00CH37088). 380-381. 2000
- Modelling of optical pumping in split-electrode semiconductor lasers. Optoelectronics. 146:159-164. 1999
- Nonuniform carrier distribution in asymmetric multiple-quantum-well InGaAsP laser structures with different numbers of quantum wells. Applied Physics Letters. 74:744-746. 1999
- Characterization of He-plasma-assisted GSMBE InGaAsP. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 143-146. 1999
- Re-growth over grating-etched InGaAsP. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 135-138. 1999
- Effect of barrier height on the uneven carrier distribution in asymmetric multiple-quantum-well InGaAsP lasers. IEEE Photonics Technology Letters. 10:1380-1382. 1998
- Modelling of self-sustained pulsations in non-uniformly pumped semiconductor lasers. Optoelectronics. 145:217-222. 1998
- Wet Chemical Etching for V‐grooves into InP Substrates. Journal of the Electrochemical Society. 145:2931-2937. 1998
- Compositional intermixing enhancement in InGaAs(P)/InP quantum well heterostructures related to lateral composition modulation. Semiconductor Science and Technology. 13:750-755. 1998
- Growth mechanisms of III–V compounds by atomic hydrogen-assisted epitaxy. Journal of Crystal Growth. 191:319-331. 1998
- Reduction of composition modulation of InGaAsP grown by atomic-hydrogen-assisted epitaxy producing improved double-heterostructure laser performance. Semiconductor Science and Technology. 13:637-640. 1998
- InGaAsP grown by He-plasma-assisted molecular beam epitaxy for 1.55 μm high speed photodetectors. Applied Physics Letters. 72:1278-1280. 1998
- Dependence of carrier lifetime and resistivity on annealing in InP grown by He-plasma-assisted molecular beam epitaxy. Journal of Applied Physics. 83:3423-3425. 1998
- Evaluation of plasma and thermal sources for atomic hydrogen-assisted epitaxy of InP. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 16:590-594. 1998
- Compositional variations in InGaAsP films grown on patterned substrates. Journal of Crystal Growth. 182:266-274. 1997
- Subpicosecond carrier lifetime in beryllium-doped InGaAsP grown by He-plasma-assisted molecular beam epitaxy. Applied Physics Letters. 71:1513-1515. 1997
- 1.4-μm InGaAsP-InP strained multiple-quantum-well laser for broad-wavelength tunability. IEEE Photonics Technology Letters. 9:1202-1204. 1997
- Role of atomic hydrogen in argon plasma-assisted epitaxy of InGaAsP/InP. Journal of Vacuum Science and Technology B. 15:1707-1714. 1997
- Band-gap blue shift by impurity-free vacancy diffusion in 1.5-μm-strained InGaAsP/InP multiple quantum-well laser structure. Applied Physics Letters. 70:3419-3421. 1997
- Growth of InGaAs/InP structures by gas source molecular beam epitaxy on SiO2-patterned substrates for optoelectronic applications. Journal of Crystal Growth. 177:1-5. 1997
- Anisotropic interfacial strain in InP/InGaAs/InP quantum wells studied using degree of polarization of photoluminescence. Journal of Applied Physics. 81:3616-3620. 1997
- The morphology of InP/InGaAs grown by molecular beam epitaxy onto V-grooved InP substrates. Journal of Crystal Growth. 173:307-314. 1997
- Band gap modification in Ne+-ion implanted In1−xGaxAs/InP and InAsyP1−y/InP quantum well structures. Journal of Applied Physics. 81:765-770. 1997
- Picosecond carrier lifetime and large optical nonlinearities in InGaAsP grown by He-plasma-assisted molecular beam epitaxy. Optics Letters. 22:108-108. 1997
- Inline quantum-well waveguide photodetectors for the measurement of wavelength shifts. Journal of Lightwave Technology. 15:2278-2283. 1997
- 4 × 4 vertical-cavity surface-emitting laser (VCSEL) and metal–semiconductor–metal (MSM) optical backplane demonstrator system. Applied Optics. 35:6365-6365. 1996
- High performance MSM photodetector operating at 1.3-1.5 μm. Solid-State Electronics. 39:1283-1287. 1996
- High-responsivity InGaAs/InP-based MSM photodetector operating at 1.3-μm wavelength. Microwave and Optical Technology Letters. 12:310-313. 1996
- Evaluation of H-plasma and thermal oxide desorption procedures for MBE regrowth of an InP/InGaAs/InP quantum well. Semiconductor Science and Technology. 11:1178-1184. 1996
- He-plasma assisted epitaxy for highly resistive, optically fast InP-based materials. Applied Physics Letters. 69:509-511. 1996
- High energy He+ bombardment of n-type InP. Solid-State Electronics. 39:977-980. 1996
- On-die diffractive alignment structures for packaging of microlens arrays with 2-D optoelectronic device arrays. IEEE Photonics Technology Letters. 8:918-920. 1996
- Group V incorporation in InGaAsP grown on InP by gas source molecular beam epitaxy. Journal of Applied Physics. 79:3021-3027. 1996
- Lateral composition modulation in InGaAsP strained layers and quantum wells grown on (100) InP by gas source molecular beam epitaxy. Journal of Crystal Growth. 158:6-14. 1996
- Picosecond carrier lifetime in InGaAsP grown by He plasma-assisted molecular beam epitaxy. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. 132. 1996
- Very low dark current InGaP/GaAs MSM-photodetector using semi-transparent and opaque contacts. Electronics Letters. 32:766-766. 1996
- Lateral composition modulation in InGaAsP deposited by gas source molecular beam epitaxy on (100)- and (h11)-oriented InP substrates. Applied Surface Science. 90:437-445. 1995
- InGaAs/InP quantum wires grown by gas source molecular beam epitaxy onto V-grooved InP substrates with (111)A facet sidewalls. Applied Physics Letters. 67:2358-2360. 1995
- Spinodal-like decomposition of grown by gas source molecular beam epitaxy. Journal of Crystal Growth. 155:1-15. 1995
- Effects of Electron Cyclotron Resonance Power and Cavity Dimensions in Plasma Etching of III–V Compounds. Journal of the Electrochemical Society. 142:2762-2769. 1995
- Etching of InP surface oxide with atomic hydrogen produced by electron cyclotron resonance. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 13:2146-2150. 1995
- Spontaneous oscillations in the InP-InGaAsP lasing optoelectronic switch (LOES). IEEE Journal of Quantum Electronics. 31:1308-1314. 1995
- An investigation into the temperature sensitivity of strained and unstrained multiple quantum-well, long wavelength lasers: new insight and methods of characterization. IEEE Journal of Selected Topics in Quantum Electronics. 1:275-284. 1995
- Electrical properties of p-type InGaAsP and InGaAs irradiated with He+ and N+. Journal of Applied Physics. 77:5580-5583. 1995
- Desorption of ultraviolet-ozone oxides from InP under phosphorus and arsenic overpressures. Journal of Applied Physics. 77:5167-5172. 1995
- Hydrogen incorporation into Si-doped InP deposited by gas-source molecular beam epitaxy. Journal of Applied Physics. 77:3378-3381. 1995
- The Effect of the Native Oxide on Mask Undercutting of V‐Grooves Etched into (100) InP Surfaces Using an SiN x Mask. Journal of the Electrochemical Society. 142:593-596. 1995
- High resistivity in n-type InP by He+ bombardment at 300 and 60 K. Solid-State Electronics. 38:75-81. 1995
- Experimental study of implantation-induced disordering in InGaAsP strained multiple-quantum-well heterostructures. Applied Physics Letters. 65:1239-1241. 1994
- Strained layer (1.5 /spl mu/m) InP/InGaAsP lasing opto-electronic switch (LOES). IEEE Photonics Technology Letters. 6:927-929. 1994
- High-resistivity regions in n-type InGaAsP produced by ion bombardment at different temperatures. Journal of Applied Physics. 76:199-206. 1994
- Strain-induced electrically active stoichiometric defects in InAsyP1−y deposited onto (100) InP by gas-source molecular beam epitaxy. Journal of Applied Physics. 75:4032-4039. 1994
- Enhanced helium release by hydrogen isotope charging in polycrystalline nickel. Radiation Effects and Defects in Solids. 128:247-256. 1994
- Low temperature radio frequency sputter deposition of TiN thin films using optical emission spectroscopy as process monitor. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 12:83-89. 1994
- Dislocation relaxation in InAsyP1−y films deposited onto (001) InP by gas-source molecular beam epitaxy. Applied Physics Letters. 63:3194-3196. 1993
- Identification of volatile products in low pressure hydrocarbon electron cyclotron resonance reactive ion etching of InP and GaAs. Journal of Vacuum Science and Technology B. 11:2038-2045. 1993
- High-resistivity regions in n-type InGaAsP produced by 4He+ ion bombardment at 80 and 300 K. Applied Physics Letters. 63:2126-2128. 1993
- InP/InGaAsP double-heterostructure optoelectronic switch. IEEE Electron Device Letters. 14:54-56. 1993
- Deuterium permeation in polycrystalline nickel pre-implanted with nickel and helium ions. Materials Science & Engineering: A. 158:71-78. 1992
- Strain-induced performance improvements in long-wavelength, multiple-quantum-well, ridge-waveguide lasers with all quaternary active regions. IEEE Photonics Technology Letters. 4:299-301. 1992
- Synergistic effects between helium and hydrogen isotopes on gas detrapping in polycrystalline nickel. Journal of Nuclear Materials. 186:61-67. 1991
- Deuterium diffusion, trapping and release in ion-implanted nickel. Radiation Effects and Defects in Solids. 117:285-297. 1991
- Growth and characterization of silicon nitride films produced by remote microwave plasma chemical vapor deposition. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 9:2594-2601. 1991
- Thermal desorption of deuterium from polycrystalline nickel pre-implanted with helium. Journal of Nuclear Materials. 182:128-134. 1991
- Deuterium permeation and diffusion in high-purity beryllium. Journal of Nuclear Materials. 175:90-95. 1990
- Observation of Lomer–Cottrell locks in SiGe strained layers. Applied Physics Letters. 57:2220-2221. 1990
- ChemInform Abstract: Electrocatalytic Behavior of Ion‐Beam Mixed Ni‐Pd Surface Alloys for the Hydrogen Evolution Reaction in KOH.. ChemInform. 21:no-no. 1990
- Electrocatalytic Behavior of Ion‐Beam Mixed Ni‐Pd Surface Alloys for the Hydrogen Evolution Reaction in KOH. Journal of the Electrochemical Society. 137:2175-2180. 1990
- Preface. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 46:vii-vii. 1990
- A comparison between electron and ion damage in quartz. Radiation Effects and Defects in Solids. 112:39-45. 1990
- Electrocatalysis of Pt-Fe alloys produced by ion beam mixing. Journal of Materials Research. 5:98-108. 1990
- Planar channeling in GaAs/InxGa1−xAs/GaAs strained-layer structures. Journal of Applied Physics. 65:1510-1515. 1989
- Rutherford backscattering investigation of radiation damage effects on the leaching of sphene and sphene-based glass-ceramics. Journal of Nuclear Materials. 161:169-174. 1989
- Solid phase epitaxial regrowth of Si1−xGex/Si strained-layer structures amorphized by ion implantation. Applied Physics Letters. 54:42-44. 1989
- Channeling studies in strained-layer epitaxial structures. Vacuum. 39:73-77. 1989
- Channeling studies of Pb1−xSnxTe/PbSeyTe1−y epitaxial structures. Vacuum. 39:133-135. 1989
- Ion beam mixing for ohmic contact formation to n-type GaAs. Vacuum. 39:303-305. 1989
- Ion-beam mixing of Ni/Pd layers: I. Cascade mixing regime (low temperature). Journal of Materials Research. 3:1057-1062. 1988
- Ion-beam mixing of Ni/Pd layers: II. Thermally assisted regime (>500K). Journal of Materials Research. 3:1063-1071. 1988
- Inelastic light scattering in halide and oxide glasses: Intrinsic Brillouin linewidths and stimulated Brillouin gain. Journal of Non-Crystalline Solids. 102:240-249. 1988
- Optical studies of glass stability in fluoride glass systems: Intrinsic rayleigh scattering. Journal of Non-Crystalline Solids. 102:295-301. 1988
- The effect of aluminum ion implantation on the oxidation of an Fe-6 at.% Al alloy at 1173 K. HIGH TEMPERATURE CORROSION OF MATERIALS. 28:259-276. 1987
- Thin-film alloys of Bi1−x Sbx produced by ion-beam mixing and their thermoelectric properties. Journal of Materials Research. 2:313-316. 1987
- Brillouin Scattering and Phonon Attenuation in Halide and Oxide Glasses. Materials Science Forum. 19-20:653-670. 1987
- Brillouin scattering and phonon attenuation in halide glasses: stimulated Brillouin emission. Electronics Letters. 23:1128-1128. 1987
- Intrinsic Rayleigh Scattering in Fluoride Glasses. Materials Science Forum. 19-20:637-646. 1987
- The effects of annealing on disorder preservation in ion implanted InP. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 19-20:422-426. 1987
- Ion implantation damage in CdS. Radiation Effects and Defects in Solids. 98:289-300. 1986
- Implantation and grain growth in ni thin films induced by Bi and Ag ions. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 16:288-292. 1986
- Tritium profiling using the T(d, 4He)n reaction. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 15:535-539. 1986
- Defect production and stability in high-energy-density cascades in Ni. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 7-8:124-127. 1985
- Implantation of Ni thin films and single crystals with Ag ions. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 7-8:97-102. 1985
- Ion beam mixing to produce Bi/Sb alloys for thin film thermoelectric devices. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 7-8:566-570. 1985
- Thermoelectric properties of BiSb alloys. Materials Chemistry and Physics. 12:29-36. 1985
- Ion bombardment damage in α-quartz at 50–295 K. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 1:176-182. 1984
- Sputtering of frozen Xenon by keV heavy ions. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 1:315-320. 1984
- Disorder production in ion implanted gallium arsenide at 40 K. Radiation Effects and Defects in Solids. 71:95-107. 1983
- Ion Implantation Damage in CdS Crystals Using RBS/Channeling and Tem. Materials Research Society Symposium - Proceedings. 27:323. 1983
- Radiation Damage Effects in Solid Wastes. Canadian Metallurgical Quarterly. 22:81-86. 1983
- Annealing studies of ion-implanted gaas in the 40–300 K range. Radiation Effects and Defects in Solids. 66:15-20. 1982
- DIFFERENCES BETWEEN RADIATION DAMAGE TO GAAS BY IMPLANTATION OF P AND AL IONS.. Soviet physics. Semiconductors. V 16:373-376. 1982
- DIFFERENCES BETWEEN RADIATION-DAMAGE TO GAAS BY IMPLANTATION OF P AND AL IONS. Soviet physics. Semiconductors. 16:373-376. 1982
- Large angle differential scattering cross-sections for various ions (2 ⩽ Z1 ⩽ 10) in the 65–135 keV energy range. Nuclear Instruments & Methods in Physics Research. 191:495-499. 1981
- Stopping powers for 20–140 keV H+ and He+ on Ni, Ag and Au. Nuclear Instruments & Methods in Physics Research. 191:469-474. 1981
- Comparison of ion beam mixing at room temperature and 40 K. Nuclear Instruments and Methods. 182-183:115-119. 1981
- Effect of ion implantation on the oxygen overpotential of Ni Anodes. Nuclear Instruments and Methods. 182-183:985-990. 1981
- Application of an extended linear cascade model to the sputtering of Ag, Au, and Pt by heavy atomic and molecular ions. Journal of Applied Physics. 52:982-989. 1981
- A first order diffusion approximation to atomic redistribution during ion bombardment of solids, II. finite range approximation. Radiation Effects and Defects in Solids. 55:99-110. 1981
- High density cascade effects. Radiation Effects and Defects in Solids. 56:105-150. 1981
- Influence of the bombarding angle on the sputtering yield of heavy atomic and molecular ion bombardment of Ag and Auf. Radiation Effects and Defects in Solids. 55:91-98. 1981
- Light-ion neutralization behavior in the 25 to 150 keV range using a medium-energy ion-reflection spectrometer. Surface Science Letters. 100:A382-A382. 1980
- Light-ion neutralization behavior in the 25 to 150 keV range using a medium-energy ion-reflection spectrometer. Surface Science. 100:14-27. 1980
- Collision cascades in silicon. Nuclear Instruments and Methods. 170:419-425. 1980
- Heavy ion neutralization behaviour in the 30–130 keV energy regime. Nuclear Instruments and Methods. 170:549-552. 1980
- Sputtering of silver by heavy atomic and molecular ion bombardment. Nuclear Instruments and Methods. 170:281-285. 1980
- ATOMIC-COLLISIONS IN SOLIDS - PROCEEDINGS OF THE 8TH INTERNATIONAL-CONFERENCE ON ATOMIC-COLLISIONS IN SOLIDS - HAMILTON, CANADA, AUGUST 13-17, 1979 - EDITORIAL. Nuclear Instruments and Methods. 170:R7-R7. 1980
- Annealing of heavy ion cascade damage in silicon. Radiation Effects and Defects in Solids. 50:125-131. 1980
- Anomalous surface damage in ion bombarded silicon from channelling-backscattering measurements. Radiation Effects and Defects in Solids. 46:71-77. 1980
- Disorder production and amorphisation in ion implanted silicon. Radiation Effects and Defects in Solids. 52:69-84. 1980
- Stopping powers and backscattered charge fractions for 20–150 keV H+ and He+ on gold. Nuclear Instruments and Methods. 168:63-68. 1980
- 10–16 MeV proton irradiation damage in iron and copper. Journal of Nuclear Materials. 85-86:509-513. 1979
- Measurement of differential wall changes using surface probes in the Alcator-A tokamak. Journal of Nuclear Materials. 85-86:973-977. 1979
- Spike effects in heavy-ion sputtering of Ag, Au and Pt thin films. Surface Science. 90:319-330. 1979
- 10–16 MeV proton irradiation of iron, zirconium and copper: Resistivity-dose measurements. Journal of Nuclear Materials. 84:173-182. 1979
- 10–16 MeV proton irradiation of iron, zirconium and copper: isochronal anneal measurements. Journal of Nuclear Materials. 84:183-195. 1979
- Nonlinear sputtering effects in thin metal films. Applied Physics Letters. 34:342-345. 1979
- The influence of incident flux dependent radiation enhanced diffusion on composition changes of sputtered binary solids. Radiation Effects and Defects in Solids. 40:119-121. 1979
- Development of vacuum transfer techniques for tokamak in-situ surface analysis. Journal of Nuclear Materials. 76-77:621-622. 1978
- Energy loss of He ions in solidified gases. Nuclear Instruments and Methods. 149:115-120. 1978
- Computer simulation of ion bombardment collision cascades. Radiation Effects and Defects in Solids. 37:113-120. 1978
- Contribution of strain effects toward the damage measured in semiconductors by channeling. Radiation Effects and Defects in Solids. 36:205-214. 1978
- Energy spikes in Si and Ge due to heavy ion bombardment. Radiation Effects and Defects in Solids. 36:91-100. 1978
- Sputtering of niobium by energetic neutrons and protons: A round-robin experiment. Journal of Applied Physics. 48:3914-3918. 1977
- A semiempirical method of applying the dechanneling correction in the extraction of disorder distribution. Radiation Effects and Defects in Solids. 34:157-161. 1977
- Calculation of scattering and radiation damage parameters for 14 MeV neutrons and 10 TO 20 MeV protons on Fe, Ni, Cu, Zr, Nb, and Au. Journal of Nuclear Materials. 64:121-129. 1977
- Evidence for spike-effects in low-energy heavy-ion bombardment of Si and Ge. Radiation Effects and Defects in Solids. 32:135-142. 1977
- Inelastic stopping of medium energy light ions in silicon. Radiation Effects and Defects in Solids. 32:169-175. 1977
- Measurement of damage distributions in ion bombarded Si, GaP and GaAs at 50 K. Nuclear Instruments and Methods. 135:489-495. 1976
- Nitrogen implanted SiC: Correlation of channeling and electrical studies. Canadian Journal of Physics. 54:626-632. 1976
- Channeling measurements of damage in ion bombarded semiconductors at 50° K. Radiation Effects and Defects in Solids. 30:37-46. 1976
- Comparison of measured and calculated damage distributions for light keV ion bombardment of solid surfaces. Nuclear Instruments and Methods. 132:261-265. 1976
- Low energy ion induced damage in silicon at 50 K. Nuclear Instruments and Methods. 132:281-284. 1976
- Scattering of light keV ions from amorphous and crystalline solid surfaces. Nuclear Instruments and Methods. 132:667-671. 1976
- Nitrogen implantation into GaP: Damage and nitrogen location studies. Journal of Electronic Materials. 4:195-207. 1975
- Nitrogen Implanted Germanium: Damage, Lattice Location, and Electrical Properties. Canadian Journal of Physics. 53:303-309. 1975
- Nitrogen−implanted silicon. I. Damage annealing and lattice location. Journal of Applied Physics. 46:332-334. 1975
- Nitrogen−implanted silicon. II. Electrical properties. Journal of Applied Physics. 46:335-343. 1975
- ChemInform Abstract: THE SOLID SOLUBILITY OF GOLD IN DOPED SILICON BY OXIDE ENCAPSULATION. ChemInform. 5:no-no. 1974
- Particle Emission from Metal Surfaces Irradiated with MeV Protons. Physical Review Letters. 33:1569-1572. 1974
- The Solid Solubility of Gold in Doped Silicon by Oxide Encapsulation. Journal of the Electrochemical Society. 121:1350-1350. 1974
- Polycrystalline silicon resistors for integrated circuits. Solid-State Electronics. 16:701-708. 1973
- A Computer Controlled Automatic System for Measuring the Conductivity and Hall Effect in Semiconducting Samples. Review of Scientific Instruments. 42:1797-1807. 1971
- Stopping Cross Sections for 0.3- to 1.7-MeV Helium Ions in Silicon and Silicon Dioxide. Journal of Applied Physics. 42:3969-3976. 1971
- Isochronal annealing ofpandn-type silicon irradiated at 80°K. Philosophical Magazine. 20:951-964. 1969
- Electron and neutron irradiation of boron and phosphorus-doped silicon at 80°K. Philosophical Magazine. 20:301-310. 1969
- THE DETERMINATION OF SURFACE CONTAMINATION ON SILICON BY LARGE ANGLE ION SCATTERING. Applied Physics Letters. 14:102-103. 1969
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other
- Ion Implanted Solar Cells. 543-553. 1977
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theses