Conference
Correcting Limited-Magnitude Errors in the Rank-Modulation Scheme
Abstract
We study error-correcting codes for permutations under the infinity norm, motivated the rank-modulation scheme for flash memories. In this scheme, a set of $n$ flash cells are combined to create a single virtual multi-level cell. Information is stored in the permutation induced by the cell charge levels. Spike errors, which are characterized by a limited-magnitude change in cell charge levels, correspond to a low-distance change under the …
Authors
Tamo I; Schwartz M
Pagination
pp. 1-2
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
January 1, 2010
DOI
10.1109/ita.2010.5454091
Name of conference
2010 Information Theory and Applications Workshop (ITA)