Preprint
Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band
Abstract
Core-shell GaAs-based nanowires monolithically integrated on Si constitute a
promising class of nanostructures that could enable light emitters for fast
Authors
Herranz J; Corfdir P; Luna E; Jahn U; Lewis RB; Schrottke L; Lähnemann J; Tahraoui A; Trampert A; Brandt O
Publication date
August 27, 2019
DOI
10.48550/arxiv.1908.10134
Preprint server
arXiv