Journal article
2D Oxides Realized via Confinement Heteroepitaxy
Abstract
Abstract Novel confinement techniques facilitate the formation of non‐layered 2D materials. Here it is demonstrated that the formation and properties of 2D oxides (GaO x , InO x , SnO x ) at the epitaxial graphene (EG)/silicon carbide (SiC) interface is dependent on the EG buffer layer properties prior to element intercalation. Using 2D Ga, it is demonstrated that defects in the EG buffer layer lead to Ga transforming to GaO x with …
Authors
Turker F; Dong C; Wetherington MT; El‐Sherif H; Holoviak S; Trdinich ZJ; Lawson ET; Krishnan G; Whittier C; Sinnott SB
Journal
Advanced Functional Materials, Vol. 33, No. 5,
Publisher
Wiley
Publication Date
1 2023
DOI
10.1002/adfm.202210404
ISSN
1616-301X