Journal article
Optoelectronic Properties of Ce3+ Doped Silicon Oxide and Oxynitride Electroluminescent Devices
Abstract
In this work, we propose a new type of silicon-based electroluminescent device. The thin film emitting layers of the device were deposited using Electron-Cyclotron-Resonance Plasma Enhanced Chemical-Vapor Deposition (ECR-PECVD) with in-situ Ce3+ doping on a P-type silicon substrate. Oxygen was gradually substituted by nitrogen to produce silicon oxynitride thin films with different layer compositions. Refractive indices extracted from …
Authors
Gao Y; Abdelal A; Azmi F; Khatami Z; Mascher P
Journal
ECS Meeting Abstracts, Vol. MA2020-01, No. 52, pp. 2935–2935
Publisher
The Electrochemical Society
Publication Date
May 1, 2020
DOI
10.1149/ma2020-01522935mtgabs
ISSN
2151-2043