Journal article
(Invited) Advanced Characterization of III-Nitrides: From 2-D Epi-Layers to Bulk Defect Analysis
Abstract
Electron Microscopy is a powerful tool for aid in the development of new compound semiconductors because it has the ability to characterize materials from the atom (aberration-corrected Transmission Electron Microscopy) to the millimeter length scale (montaged scanning electron microscopy - SEM). By including important aspects of the electron-sample interaction in a microscopy, we can couple imaging with crystallography (diffraction), chemistry …
Authors
Bassim N; El-Sherif H; Jovanovic S; Preston J; Robinson J
Journal
ECS Meeting Abstracts, Vol. MA2021-02, No. 32, pp. 952–952
Publisher
The Electrochemical Society
Publication Date
October 19, 2021
DOI
10.1149/ma2021-0232952mtgabs
ISSN
2151-2043