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Self-Directed Growth of AlGaAs Core−Shell...
Journal article

Self-Directed Growth of AlGaAs Core−Shell Nanowires for Visible Light Applications

Abstract

Al0.37Ga0.63As nanowires (NWs) were grown in a molecular beam epitaxy system on GaAs(111)B substrates. Micro-photoluminescence measurements and energy dispersive X-ray spectroscopy indicated a core--shell structure and Al composition gradient along the NW axis, producing a potential minimum for carrier confinement. The core--shell structure formed during growth as a consequence of the different Al and Ga adatom diffusion lengths.

Authors

Chen; Shehata S; Fradin C; LaPierre R; Couteau C; Weihs G

Journal

Nano Letters, Vol. 7, No. 9, pp. 2584–2589

Publisher

American Chemical Society (ACS)

Publication Date

September 1, 2007

DOI

10.1021/nl070874k

ISSN

1530-6984