Ray Robert Lapierre - McMaster Experts

Affiliations

McMaster University,
Faculty of Engineering, McMaster University
Professor, Engineering Physics, Faculty of Engineering
Member, McMaster Institute for Energy Studies (MIES), Faculty of Engineering
Member, Biointerfaces Institute, Faculty of Science
Biointerfaces Institute (Internal), Faculty of Science

Scholarly Activity in McMaster Experts

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books
- Introduction to Quantum Computing 2021
- Advances in III-V Semiconductor Nanowires and Nanodevices 2012
chapters
- Mapping electrostatic potentials across the p‐n junction in GaAs nanowires by off‐axis electron holography. 743-744.
conferences
- Droplet contact angle controlling the morphology and crystal phase of GaAs and GaP nanowires. 2022 International Conference Laser Optics (ICLO). 1-1. 2022
- III-V nanowire growth for quantum photonics and optoelectronics. Photonics for Quantum 2020. 9. 2021
- Characterization of InSb nanopillars for field emission applications. Journal of Physics: Conference Series. 012004-012004. 2021
- Stopping effect in growth kinetics of III-V nanowires. 2020 International Conference Laser Optics (ICLO). 2020
- (Invited) Effect of the Plasma Etching on InAsP/InP Quantum Well Structures Measured through Low Temperature Micro-Photoluminescence and Cathodoluminescence. ECS Transactions. 43-55. 2020
- Modeling the morphology of self-assisted GaP nanowires grown by molecular beam epitaxy. 2018 International Conference Laser Optics (ICLO). 381-381. 2018
- Optical Optimization of Passivated GaAs Nanowire Solar Cells. Conference Record of the IEEE Photovoltaic Specialists Conference. 1294-1298. 2017
- Optimization of GaAs nanowire solar cell efficiency via optoelectronic modeling. Conference Record of the IEEE Photovoltaic Specialists Conference. 2015
- Fabrication of highly ordered vertical GaAs nanowires by inductively coupled plasma etching and their modal analysis. NSTI: Advanced Materials - TechConnect Briefs 2015. 105-107. 2015
- Diameter dependent heating in GaAs nanowires. Proceedings of the IEEE Conference on Nanotechnology. 893-895. 2014
- (Invited) Novel Luminescent Materials Based on Semiconductor Nanowires. ECS Transactions. 3-8. 2014
- Nanowires for next generation photovoltaics. Proceedings of SPIE - The International Society for Optical Engineering. 2013
- Surface passivation of GaAs nanowire ensembles for photovoltaic applications. Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013. 25-28. 2013
- Modeling growth, morphology, and composition of ternary III – V nanowires. 2013 Saudi International Electronics, Communications and Photonics Conference. 2013
- (Invited) Passivation of III-V Nanowires for Optoelectronics. ECS Transactions. 51-60. 2012
- GaAs Nanowires Fabricated Using Colloidal Lithography and Dry Etching. Asia Communications and Photonics Conference, ACP. 2012
- Optimization of GaAs nanowire array for solar cells. Asia Communications and Photonics Conference, ACP. 2012
- III-V nanowire solar cells. Proceedings of SPIE - The International Society for Optical Engineering. 2011
- III-V nanowire solar cells. Asia Communications and Photonics Conference and Exhibition, ACP 2011. 2011
- III-V nanowire solar cells. Display, Solid-State Lighting, Photovoltaics, and Optoelectronics in Energy. 831203. 2011
- Impedance spectroscopy characterization of GaAs nanowire bundles grown by metal-catalyzed molecular beam epitaxy. Journal of Alloys and Compounds. 443-445. 2010
- Randomly oriented ZnO nanowires grown on amorphous SiO2 by metal-catalyzed vapour deposition. Journal of Alloys and Compounds. 439-442. 2010
- Growth and Characterization of p-n Junction Core-Shell GaAs Nanowires on Carbon Nanotube Composite Films. Materials Research Society Symposium - Proceedings. 91-+. 2009
- Miniband Effects in Short-period InGaAs/InP Superlattices. AIP Conference Proceedings. 385-386. 2007
- Evidence of the miniband formation in InGaAs/InP superlattices. Brazilian Journal of Physics. 905-907. 2006
- Nanowire fabrication and biosensor applications. Proceedings of SPIE - The International Society for Optical Engineering. 59690g-59690g-12. 2005
- Effect of noble gas plasmas on the growth of InP by gas-source molecular beam epitaxy. ION BEAM MODIFICATION OF MATERIALS. 769-772. 1996
- Improved structural and optical properties of InGaAsP grown on InP by ECR plasma-assisted epitaxy. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 517-520. 1996
- Spinodal-like decomposition of InGaAsP/InP grown by gas source molecular beam epitaxy. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 175-178. 1995
- Transmission electron microscopy and photoluminescence studies of In1-xGaxAsyP1-y films grown on <100> InP substrates. Institute of Physics Conference Series. 253-256. 1995
journal articles
- Spatially resolved luminescence properties of etched quantum well microstructures. Journal of Applied Physics. 136:123102. 2024
- (Invited) Spatially–Resolved Luminescence Properties of Etched Quantum Well Microstructures. ECS Meeting Abstracts. MA2024-01:1332-1332. 2024
- (Invited) Ultrathin Gap Nanoantenna: Crystal Phase Transitions and Luminescent Properties. ECS Meeting Abstracts. MA2024-01:1330-1330. 2024
- Selective Area HVPE of InGaAs Nanowires with Widely Tunable Composition on Si Substrates for Nanoscale Device Integration on Si Platforms. ACS Applied Nano Materials. 7:17417-17423. 2024
- Long indium-rich InGaAs nanowires by SAG-HVPE. Nanotechnology. 35:195601-195601. 2024
- Analytical model of a nanowire-based betavoltaic device. Journal of Applied Physics. 135. 2024
- Phosphorus-Controlled Nanoepitaxy of Asymmetric GaAs–InP Core–Shell Bent Nanowires: Implications for Bottom-Up Nanowire Transistors and Sensors. ACS Applied Nano Materials. 7:1257-1264. 2024
- Detection of Be dopant pairing in VLS grown GaAs nanowires with twinning superlattices. Nanotechnology. 34:385701-385701. 2023
- Magnetic field effects on the valence band of AlGaAs and InGaAsP parabolic quantum wells. Physical review B (PRB). 108. 2023
- Ultrathin Te-Doped GaP Nanoantenna with Crystal Phase Transitions. Crystal Growth & Design. 23:5074-5082. 2023
- Importance of As and Ga Balance in Achieving Long GaAs Nanowires by Selective Area Epitaxy. Crystal Growth & Design. 23:4401-4409. 2023
- Selective Area Growth of GaAs Nanowires and Microplatelet Arrays on Silicon by Hydride Vapor-Phase Epitaxy. Crystal Growth & Design. 23:2120-2127. 2023
- In situ off-axis electron holography of real-time dopant diffusion in GaAs nanowires. Nanotechnology. 33:475705-475705. 2022
- Corrugated nanowires as distributed Bragg reflectors. Nano Express. 3:035005-035005. 2022
- Inter-Landau level transfer in valence band of In0.53Ga0.47As/InP quantum well. Physica E: Low-Dimensional Systems and Nanostructures. 143:115347-115347. 2022
- (Invited) Low-Temperature Spatially-Resolved Luminescence Spectroscopy of Microstructures with Strained III-V Quantum Wells. ECS Meeting Abstracts. MA2022-01:1090-1090. 2022
- Thermal transport in twinning superlattice and mixed-phase GaAs nanowires. Nanoscale. 14:6480-6487. 2022
- Thermal Conductivity of GaAs Nanowire Arrays Measured by the 3ω Method. Nanomaterials. 12:1288-1288. 2022
- Phase Diagram for Twinning Superlattice Te-Doped GaAs Nanowires. Nano Letters. 22:1345-1349. 2022
- Low temperature micro-photoluminescence spectroscopy of microstructures with InAsP/InP strained quantum wells. Journal of Physics D: Applied Physics. 54:445106-445106. 2021
- Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays. Crystal Growth & Design. 21:5158-5163. 2021
- Spin relaxation of holes in In0.53Ga0.47As/InP quantum wells. Physica E: Low-Dimensional Systems and Nanostructures. 131:114700-114700. 2021
- Improving the yield of GaAs nanowires on silicon by Ga pre-deposition. Nanotechnology. 32:265301-265301. 2021
- In Memoriam - Professor Mark Reed. Nano Futures. 5. 2021
- Simulation of optical absorption in conical nanowires. Optics Express. 29:9544-9544. 2021
- Conformal Growth of Radial InGaAs Quantum Wells in GaAs Nanowires. Journal of Physical Chemistry Letters. 12:1275-1283. 2021
- Modelling thermoelectric transport in III–V nanowires using a Boltzmann transport approach: a review. Nanotechnology. 32:042001-042001. 2021
- Long catalyst-free InAs nanowires grown on silicon by HVPE. CrystEngComm. 23:378-384. 2021
- InAsSb pillars for multispectral long-wavelength infrared absorption. Infrared Physics and Technology. 111:103566-103566. 2020
- Modeling the dynamics of interface morphology and crystal phase change in self-catalyzed GaAs nanowires. Nanotechnology. 31:485602-485602. 2020
- Genetic Algorithm Optimization of Core-Shell Nanowire Betavoltaic Generators. Nanotechnology. 31:455403-455403. 2020
- Field Emission Characteristics of InSb Patterned Nanowires. Advanced Electronic Materials. 6. 2020
- Optical and structural analysis of ultra-long GaAs nanowires after nitrogen-plasma passivation. Nano Express. 1:020019-020019. 2020
- Be, Te, and Si Doping of GaAs Nanowires: Theory and Experiment. Journal of Physical Chemistry C. 124:17299-17307. 2020
- Design and optimization of nanowire betavoltaic generators. Journal of Applied Physics. 127. 2020
- Dynamics of Gold Droplet Formation on SiO₂/Si(111) Surface. Journal of Physical Chemistry C. 124:11946-11951. 2020
- Formation Mechanism of Twinning Superlattices in Doped GaAs Nanowires. Nano Letters. 20:3344-3351. 2020
- (Invited) Effect of the Plasma Etching on InAsP/InP Quantum Well Structures Measured through Low Temperature Micro-Photoluminescence and Cathodoluminescence. ECS Meeting Abstracts. MA2020-01:1073-1073. 2020
- (Invited) Gap Nanowires with Twinning Superlattices: Structure, Optical Properties and Applications. ECS Meeting Abstracts. MA2020-01:1076-1076. 2020
- 30 Years of Nanotechnology. Nanotechnology. 31:110201-110201. 2020
- Pyrrolidinium containing perovskites with thermal stability and water resistance for photovoltaics. Journal of Materials Chemistry C. 7:11104-11108. 2019
- Editorial for focus collection on nanophotonics and nano-optics. Nanotechnology. 30:360401-360401. 2019
- Photovoltaic Light Funnels Grown by GaAs Nanowire Droplet Dynamics. IEEE Journal of Photovoltaics. 9:1225-1231. 2019
- Stacking defects in GaP nanowires: Electronic structure and optical properties. Journal of Applied Physics. 126. 2019
- Reverse Micelle Templating Route to Ordered Monodispersed Spherical Organo-Lead Halide Perovskite Nanoparticles for Light Emission. ACS Applied Nano Materials. 2:4121-4132. 2019
- Modeling selective-area growth of InAsSb nanowires. Nanotechnology. 30:285601-285601. 2019
- Si Doping of Vapor–Liquid–Solid GaAs Nanowires: n-Type or p-Type?. Nano Letters. 19:4498-4504. 2019
- Simulation and optimization of current generation in gallium phosphide nanowire betavoltaic devices. Journal of Applied Physics. 125. 2019
- Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well. Journal of Applied Physics. 125. 2019
- InSb nanowires for multispectral infrared detection. Semiconductor Science and Technology. 34:035023-035023. 2019
- Efficient wave optics modeling of nanowire solar cells using rigorous coupled-wave analysis. Optics Express. 27:A133-A133. 2019
- GaP nanowire betavoltaic device. Nanotechnology. 30:075401-075401. 2019
- Epitaxial thin film transfer for flexible devices from reusable substrates. Materials Research Express. 6:025913-025913. 2019
- A KMnF3 perovskite structure with improved stability, low bandgap and high transport properties. Ceramics International. 45:64-68. 2019
- Nanowires for energy: A review. Applied Physics Reviews. 5. 2018
- Recombination dynamics of Landau levels in an InGaAs/InP quantum well. Physical review B (PRB). 98. 2018
- Doping assessment in GaAs nanowires. Nanotechnology. 29:234001-234001. 2018
- Tuning the morphology of self-assisted GaP nanowires. Nanotechnology. 29:225603-225603. 2018
- GaAs quantum dots in a GaP nanowire photodetector. Nanotechnology. 29:124003-124003. 2018
- Microstructure development and photoluminescence of annealed nanosized Ce:YAG/Al₂O₃ and Ce:YAG/Cr:Al₂O₃ powder composites. Materials Research Express. 5:036207-036207. 2018
- GaAsP nanowire-on-Si tandem solar cell. Journal of Photonics for Energy. 7:1-1. 2017
- Multispectral absorptance from large-diameter InAsSb nanowire arrays in a single epitaxial growth on silicon. Nano Futures. 1:035001-035001. 2017
- Three-fold Symmetric Doping Mechanism in GaAs Nanowires. Nano Letters. 17:5875-5882. 2017
- A review of III–V nanowire infrared photodetectors and sensors. Journal of Physics D: Applied Physics. 50:123001-123001. 2017
- Control of GaP nanowire morphology by group V flux in gas source molecular beam epitaxy. Journal of Crystal Growth. 462:29-34. 2017
- Nb/InAs nanowire proximity junctions from Josephson to quantum dot regimes. Nanotechnology. 28:085202-085202. 2017
- Methods of Ga droplet consumption for improved GaAs nanowire solar cell efficiency. Nanotechnology. 27:475403-475403. 2016
- Electrical characterization of chemical and dielectric passivation of InAs nanowires. Semiconductor Science and Technology. 31:114004-114004. 2016
- Optimizations of GaAs Nanowire Solar Cells. IEEE Journal of Photovoltaics. 6:1494-1501. 2016
- Optical design of a mid-wavelength infrared InSb nanowire photodetector. Nanotechnology. 27:315202-315202. 2016
- Resonant photo-thermal modification of vertical gallium arsenide nanowires studied using Raman spectroscopy. Nanotechnology. 27:245708-245708. 2016
- Shake-up effect in photoluminescence of integer quantum Hall system formed in InGaAs/InP quantum wells. Journal of Physics Condensed Matter. 28:175602-175602. 2016
- Characterization of a Ga-Assisted GaAs Nanowire Array Solar Cell on Si Substrate. IEEE Journal of Photovoltaics. 6:661-667. 2016
- (Invited) GaAs Quantum Dots in Gap Nanowires: Growth and Luminescence. ECS Meeting Abstracts. MA2016-01:2110-2110. 2016
- Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells. Journal of Applied Physics. 119. 2016
- InAs nanowire growth modes on Si (111) by gas source molecular beam epitaxy. Journal of Crystal Growth. 436:1-11. 2016
- Temperature dependence of photoluminescence from Γ–Γ and Γ–Xminibands in lattice matched InGaAs/InP superlattices. Journal of Physics D: Applied Physics. 48:465101-465101. 2015
- Conditions for high yield of selective-area epitaxy InAs nanowires on SiO_x/Si(111) substrates. Nanotechnology. 26:465301-465301. 2015
- Nanowire dopant measurement using secondary ion mass spectrometry. Journal of Applied Physics. 118. 2015
- Photoluminescence and photocurrent from InP nanowires with InAsP quantum dots grown on Si by molecular beam epitaxy. Nanotechnology. 26:315202-315202. 2015
- Wavelength-selective absorptance in GaAs, InP and InAs nanowire arrays. Nanotechnology. 26:295202-295202. 2015
- Magnetic field driven interminiband charge transfer in InGaAs/InP superlattices. Journal of Physics Condensed Matter. 27:245601-245601. 2015
- Magnetoconductance signatures of subband structure in semiconductor nanowires. Physical review B (PRB). 91. 2015
- Optical characterization of epitaxial single crystal CdTe thin films on Al2O3 (0001) substrates. Thin Solid Films. 570:155-158. 2014
- Model of patterned self-assisted nanowire growth. Nanotechnology. 25:415304-415304. 2014
- Enhanced Photothermal Conversion in Vertically Oriented Gallium Arsenide Nanowire Arrays. Nano Letters. 14:5820-5826. 2014
- Multi-spectral optical absorption in substrate-free nanowire arrays. Applied Physics Letters. 105. 2014
- Gallium loading of gold seed for high yield of patterned GaAs nanowires. Applied Physics Letters. 105. 2014
- Highly ordered vertical GaAs nanowire arrays with dry etching and their optical properties. Nanotechnology. 25:305303-305303. 2014
- Surface passivation of tellurium-doped GaAs nanowires by GaP: Effect on electrical conduction. Journal of Applied Physics. 115. 2014
- Josephson Interference due to Orbital States in a Nanowire Proximity Effect Junction 2014
- Low resistance indium tin oxide contact to n-GaAs nanowires. Semiconductor Science and Technology. 29:054002-054002. 2014
- (Invited) Novel Luminescent Materials Based on Semiconductor Nanowires. ECS Meeting Abstracts. MA2014-01:1564-1564. 2014
- Unveiling transient GaAs/GaP nanowire growth behavior using group V oscillations. Journal of Crystal Growth. 388:116-123. 2014
- Monitoring the Fermi-level position within the bandgap on a single nanowire: A tool for local investigations of doping. Journal of Applied Physics. 114. 2013
- Cover Picture: III–V nanowire photovoltaics: Review of design for high efficiency (Phys. Status Solidi RRL 10/2013). Physica Status Solidi - Rapid Research Letetrs. 7. 2013
- III–V nanowire photovoltaics: Review of design for high efficiency. Physica Status Solidi - Rapid Research Letetrs. 7:815-830. 2013
- Opportunities and pitfalls in patterned self-catalyzed GaAs nanowire growth on silicon. Semiconductor Science and Technology. 28:105025-105025. 2013
- Study of radial growth in patterned self‐catalyzed GaAs nanowire arrays by gas source molecular beam epitaxy. Physica Status Solidi - Rapid Research Letetrs. 7:845-849. 2013
- Surface depletion and electrical transport model of AlInP-passivated GaAs nanowires. Semiconductor Science and Technology. 28:105026-105026. 2013
- Electrostatic model of radial pn junction nanowires. Journal of Applied Physics. 114. 2013
- Temperature-dependent electron mobility in InAs nanowires. Nanotechnology. 24:225202-225202. 2013
- Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires. Journal of Applied Physics. 113. 2013
- Current matching and efficiency optimization in a two-junction nanowire-on-silicon solar cell. Nanotechnology. 24:065402-065402. 2013
- Unlocking doping and compositional profiles of nanowire ensembles using SIMS. Nanotechnology. 24:045701-045701. 2013
- Electron transport in InAs-InAlAs core-shell nanowires. Applied Physics Letters. 102. 2013
- Trapped charge dynamics in InAs nanowires. Journal of Applied Physics. 113. 2013
- Effects of Be doping on InP nanowire growth mechanisms. Applied Physics Letters. 101. 2012
- Critical shell thickness for InAs-AlxIn1−xAs(P) core-shell nanowires. Journal of Applied Physics. 112. 2012
- Optical characteristics of GaAs nanowire solar cells. Journal of Applied Physics. 112. 2012
- Hall effect breaks new ground. Nature Nanotechnology. 7:695-696. 2012
- Analytical model of surface depletion in GaAs nanowires. Journal of Applied Physics. 112. 2012
- Photoluminescence model of sulfur passivated p-InP nanowires. Nanotechnology. 23:315703-315703. 2012
- ZnO nanowire co-growth on SiO₂and C by carbothermal reduction and vapour advection. Nanotechnology. 23:275602-275602. 2012
- Nanowires for energy. Nanotechnology. 23:190201-190201. 2012
- Improved conductivity and long-term stability of sulfur-passivated n-GaAs nanowires. Applied Physics Letters. 100. 2012
- Electrical transport and optical model of GaAs-AlInP core-shell nanowires. Journal of Applied Physics. 111. 2012
- Facilitating growth of InAs–InP core–shell nanowires through the introduction of Al. Journal of Crystal Growth. 345:11-15. 2012
- Fabrication of GaAs Nanowires by Colloidal Lithography and Dry Etching. Chinese Physics Letters. 29:036105-036105. 2012
- Patterned gold-assisted growth of GaP nanowires on Si. Semiconductor Science and Technology. 27:035002-035002. 2012
- (Invited) Passivation of III-V Nanowires for Optoelectronics. ECS Meeting Abstracts. MA2012-01:833-833. 2012
- Editorial [Hot Topic: Semiconductor Nanowires: Growth and Applications (Guest Editors: Ray LaPierre, Jian-Jun He and Jianye Li)]. Nanoscience and Nanotechnology - Asia. 1:91-91. 2011
- Electron and hole scattering in short-period InGaAs/InP superlattices. Journal of Applied Physics. 110. 2011
- Polytype formation in GaAs/GaP axial nanowire heterostructures. Journal of Crystal Growth. 332:21-26. 2011
- Mechanisms of molecular beam epitaxy growth in InAs/InP nanowire heterostructures. Nanotechnology. 22:335602-335602. 2011
- Hybrid GaAs-Nanowire–Carbon-Nanotube Flexible Photovoltaics. IEEE Journal of Selected Topics in Quantum Electronics. 17:1070-1077. 2011
- Introduction to the Issue on Nanowires. IEEE Journal of Selected Topics in Quantum Electronics. 17:763-765. 2011
- Theoretical conversion efficiency of a two-junction III-V nanowire on Si solar cell. Journal of Applied Physics. 110. 2011
- Contact planarization of ensemble nanowires. Nanotechnology. 22:245304-245304. 2011
- Sulfur passivation and contact methods for GaAs nanowire solar cells. Nanotechnology. 22:225402-225402. 2011
- Numerical model of current-voltage characteristics and efficiency of GaAs nanowire solar cells. Journal of Applied Physics. 109. 2011
- Texture analysis of GaAs nanowires. Semiconductor Science and Technology. 26:025014-025014. 2011
- Photoluminescence model for a hybrid aptamer-GaAs optical biosensor. Journal of Applied Physics. 107. 2010
- Dependence of InGaP nanowire morphology and structure on molecular beam epitaxy growth conditions. Nanotechnology. 21:165601-165601. 2010
- Building a spin quantum bit register using semiconductor nanowires. Nanotechnology. 21:134018-134018. 2010
- Electrical characteristics of core–shell p–n GaAs nanowire structures with Te as the n-dopant. Nanotechnology. 21:134007-134007. 2010
- A study of disorder effects in random (AlxGa1−xAs)n(AlyGa1−yAs)m superlattices embedded in a wide parabolic potential. Applied Physics Letters. 96. 2010
- Detailed modeling of the epitaxial growth of GaAs nanowires. Nanotechnology. 21:045602-045602. 2010
- Structural and optical analysis of GaAsP/GaP core-shell nanowires. Journal of Applied Physics. 106. 2009
- A GaAs nanowire/P3HT hybrid photovoltaic device. Nanotechnology. 20:465205-465205. 2009
- Analytical description of the metal-assisted growth of III–V nanowires: Axial and radial growths. Journal of Applied Physics. 105. 2009
- The effect of GaAs(100) surface preparation on the growth of nanowires. Nanotechnology. 20:115602-115602. 2009
- Passivation of GaAs by octadecanethiol self-assembled monolayers deposited from liquid and vapor phases. Journal of Vacuum Science and Technology B. 27:637-648. 2009
- A growth interruption technique for stacking fault-free nanowire superlattices. Nanotechnology. 20:025610-025610. 2009
- GaAs Core−Shell Nanowires for Photovoltaic Applications. Nano Letters. 9:148-154. 2009
- Interface roughness in short-period InGaAs∕InP superlattices. Applied Physics Letters. 93. 2008
- Control of GaAs nanowire morphology and crystal structure. Nanotechnology. 19:495603-495603. 2008
- Growth and Characterization of GaAs Nanowires on Carbon Nanotube Composite Films: Toward Flexible Nanodevices. Nano Letters. 8:4075-4080. 2008
- Properties of octadecanethiol self-assembled monolayers deposited on GaAs from liquid and vapor phases. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 26:1425-1431. 2008
- Multiple Quantum Well AlGaAs Nanowires. Nano Letters. 8:495-499. 2008
- Au-assisted growth of GaAs nanowires by gas source molecular beam epitaxy: Tapering, sidewall faceting and crystal structure. Journal of Crystal Growth. 310:356-363. 2008
- Growth and Characterization of p-n Junction Core-Shell GaAs Nanowires on Carbon Nanotube Composite Films. Materials Research Society Symposium - Proceedings. 1144:1405. 2008
- GaP/GaAsP/GaP core–multishell nanowire heterostructures on (111) silicon. Nanotechnology. 18:445304-445304. 2007
- InGaAs/InP core–shell and axial heterostructure nanowires. Nanotechnology. 18:385305-385305. 2007
- Novel fabrication method for three-dimensional nanostructuring: an application to micro-optics. Nanotechnology. 18:385301-385301. 2007
- Self-Directed Growth of AlGaAs Core−Shell Nanowires for Visible Light Applications. Nano Letters. 7:2584-2589. 2007
- The role of proximity caps during the annealing of UV-ozone oxidized GaAs. Journal of Applied Physics. 101. 2007
- X-ray photoelectron spectroscopic study of the formation of catalytic gold nanoparticles on ultraviolet-ozone oxidized GaAs(100) substrates. Journal of Applied Physics. 101. 2007
- Onset of stacking faults in InP nanowires grown by gas source molecular beam epitaxy. Applied Physics Letters. 90. 2007
- The formation of supported monodisperse Au nanoparticles by UV/ozone oxidation process. Applied Surface Science. 253:2348-2354. 2006
- Layer-by-layer and step-flow growth mechanisms in GaAsP/GaP nanowire heterostructures. Journal of Materials Research. 21:2801-2809. 2006
- High resolution x-ray diffraction analysis of InGaAs∕InP superlattices. Journal of Applied Physics. 100. 2006
- Miniband effect on optical vibrations in short-periodInxGa1−xAs∕InPsuperlattices. Physical review B (PRB). 73. 2006
- Growth mechanisms of GaAs nanowires by gas source molecular beam epitaxy. Journal of Crystal Growth. 286:394-399. 2006
- Growth mechanisms of III–V compounds by atomic hydrogen-assisted epitaxy. Journal of Crystal Growth. 191:319-331. 1998
- Reduction of composition modulation of InGaAsP grown by atomic-hydrogen-assisted epitaxy producing improved double-heterostructure laser performance. Semiconductor Science and Technology. 13:637-640. 1998
- Evaluation of plasma and thermal sources for atomic hydrogen-assisted epitaxy of InP. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 16:590-594. 1998
- Role of atomic hydrogen in argon plasma-assisted epitaxy of InGaAsP/InP. Journal of Vacuum Science and Technology B. 15:1707-1714. 1997
- Argentina: Years of uncertainty over. Elevator World. 45:63-66. 1997
- Group V incorporation in InGaAsP grown on InP by gas source molecular beam epitaxy. Journal of Applied Physics. 79:3021-3027. 1996
- Lateral composition modulation in InGaAsP strained layers and quantum wells grown on (100) InP by gas source molecular beam epitaxy. Journal of Crystal Growth. 158:6-14. 1996
- Lateral composition modulation in InGaAsP deposited by gas source molecular beam epitaxy on (100)- and (h11)-oriented InP substrates. Applied Surface Science. 90:437-445. 1995
- Spinodal-like decomposition of grown by gas source molecular beam epitaxy. Journal of Crystal Growth. 155:1-15. 1995
preprints