Application of selective epitaxial growth in MBE for short-duration gating systems Conferences

authors

• Cers, VA
• Ballik, Edward Alexander

status

• published 

publication date

• May 1998

has subject area

• 02 Physical Sciences (FoR)
• 09 Engineering (FoR)
• 10 Technology (FoR)
• Applied Physics (Science Metrix)

published in

• Thin Solid Films  Journal

presented at event

• 7th International Symposium on Silicon Molecular Beam Epitaxy  Conference

keywords

• Materials Science
• Materials Science, Coatings & Films
• Materials Science, Multidisciplinary
• Physical Sciences
• Physics
• Physics, Applied
• Physics, Condensed Matter
• Science & Technology
• Technology
• avalanche switching
• non-linear transmission lines
• selective epitaxial growth
• short-duration gating
• silicon molecular beam epitaxy
• silicon-germanium heterojunction bipolar transistors

Digital Object Identifier (DOI)

• 10.1016/s0040-6090(98)00478-7

start page

• 228

end page

• 233

volume

• 321

issue

• 1-2