The Energy Dependence of Lattice Disorder in Ion‐Implanted Silicon

AbstractThe energy dependence of lattice disorder has been studied by implanting bismuth ions of energy 20 to 225 keV into silicon crystals at room temperature. Implant doses have been kept below 6 × 1013 ions cm−2 to avoid approaching “saturation” disorder. Lattice disorder has been measured by means of the orientation dependence of the backscattered yield of a 1.0 MeV helium ion beam (i.e. by the “channeling” technique). Within the experimental precision, the observed disorder increases linearly with implantation energy over the whole range studied. This linear dependence is consistent with the Kinchin‐Pease equation, but its slope is at least a factor of two greater than the predicted value. Possible explanations for this discrepancy are discussed. The most reasonable one is that the disorder measured by the channeling technique includes not only the atoms that have been ejected into interstitial positions by the implantation, but also some of the lattice distortion resulting from this primary damage.

The Energy Dependence of Lattice Disorder in Ion‐Implanted Silicon Journal Articles