Thin compliant SiGe for relaxed SiGe and strained Si growth

Research into the creation of a thin compliant SiGe layer with alloy concentrations of 20, 30, and 40% Ge for the subsequent growth of thin relaxed SiGe layers having a total thickness less than 0.5 μm is presented. The concept of a compliant layer, through the formation of threading dislocations, is developed and investigated with atomic force microscopy, transmission electron microscopy, and x-ray diffraction. We find that we are able to …