Dislocation nucleation and growth in MOCVD GaN/AIN films on stepped and step-free 4H-SiC mesa substrates Conferences uri icon

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authors

  • Twigg, ME
  • Picard, YN
  • Bassim, Nabil
  • Caldwell, JD
  • Mastro, MA
  • Eddy, CR
  • Henry, RL
  • Holm, RT
  • Neudeck, PG
  • Trunek, AJ
  • Powell, JA

publication date

  • December 1, 2008