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Miniband Effects in Short‐period InGaAs/InP...
Conference

Miniband Effects in Short‐period InGaAs/InP Superlattices

Abstract

The formation of the miniband electron energy structure and its effect on optical vibrational modes were explored in doped InGaAs/InP superlattices with different periods. The analysis of the high resolution x‐ray diffraction and Raman data allowed us to conclude that in spite of the defect structure of the layers constituting the superlattices, their super‐periodicity was well defined. The quantitative proof of the conditions for break‐down of …

Authors

Pusep YA; de Giovanni Rodrigues A; Galzerani JC; Cornet DM; Comedi D; LaPierre RR

Volume

893

Pagination

pp. 385-386

Publisher

AIP Publishing

Publication Date

April 10, 2007

DOI

10.1063/1.2729927

Name of conference

AIP Conference Proceedings

Conference proceedings

AIP Conference Proceedings

Issue

1

ISSN

0094-243X