Erbium-doped SiOxNy films produced by ECR-PECVD

In this paper, we report on the fabrication of Erbium doped waveguide amplifiers (EDWA's) using electron cyclotron resonance plasma enhanced chemical vapour deposition (ECR-PECVD). The salient process parameters are presented, as are the determination of the Er content through Rutherford Backscattering (RBS), and measurements of the film composition using elastic recoil detection (ERD), nuclear reaction analysis (NRA) and secondary ion mass spectroscopy (SIMS).