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Erbium-doped SiOxNy films produced by ECR-PECVD
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Erbium-doped SiOxNy films produced by ECR-PECVD

Abstract

In this paper, we report on the fabrication of Erbium doped waveguide amplifiers (EDWA's) using electron cyclotron resonance plasma enhanced chemical vapour deposition (ECR-PECVD). The salient process parameters are presented, as are the determination of the Er content through Rutherford Backscattering (RBS), and measurements of the film composition using elastic recoil detection (ERD), nuclear reaction analysis (NRA) and secondary ion mass …

Authors

Irving EA

Volume

10313

Publisher

SPIE, the international society for optics and photonics

Publication Date

August 29, 2017

DOI

10.1117/12.2283846

Name of conference

Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging