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Surface activated bonding for wafer scale...
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Surface activated bonding for wafer scale galss/glass integration

Abstract

We report the bonding of glass/glass wafers by using surface activated bonding (SAB) method at room temperature without heating. Glass wafers were activated by oxygen RF plasma and nitrogen microwave plasma sequentially in this research, which could get high bonding strength in Si/Si bonding by the SAB method. We got the higher bonding strength for glass/glass than previous report. Samples debonded from the conjunction between glue and fixtures …

Authors

Suehara S; Howlader MR; Kim T; Suga T

Volume

11

Pagination

pp. 424-431

Publication Date

December 1, 2004

Conference proceedings

Proceedings Electrochemical Society