Surface activated bonding for wafer scale galss/glass integration

We report the bonding of glass/glass wafers by using surface activated bonding (SAB) method at room temperature without heating. Glass wafers were activated by oxygen RF plasma and nitrogen microwave plasma sequentially in this research, which could get high bonding strength in Si/Si bonding by the SAB method. We got the higher bonding strength for glass/glass than previous report. Samples debonded from the conjunction between glue and fixtures during tensile test in 0 Pa, 100 Pa, and 200 Pa nitrogen microwave plasma gas pressure. No relationship between bonding strength and OH density in glass was evident. The sample bonding strength increased from 400°C annealing temperature. Large differences were found in bonding strength with various annealing environment.