Conference
Surface activated bonding for wafer scale galss/glass integration
Abstract
We report the bonding of glass/glass wafers by using surface activated bonding (SAB) method at room temperature without heating. Glass wafers were activated by oxygen RF plasma and nitrogen microwave plasma sequentially in this research, which could get high bonding strength in Si/Si bonding by the SAB method. We got the higher bonding strength for glass/glass than previous report. Samples debonded from the conjunction between glue and fixtures …
Authors
Suehara S; Howlader MR; Kim T; Suga T
Volume
11
Pagination
pp. 424-431
Publication Date
December 1, 2004
Conference proceedings
Proceedings Electrochemical Society