Effect of analytical method on thickness measurements of thin oxide films Journal Articles

abstract

• AbstractThe thickness of thin natural oxide films formed on silicon, nickel, aluminium, iron, tantalum and zirconium has been measured using nuclear reaction analysis (NRA) and Auger electron spectroscopy (AES) in combination with ion beam sputtering. It is shown that ion beam effects severely limit the use of AES and ion beam sputtering in measuring thin oxide thicknesses. Relatively non‐destructive techniques such as NRA or angle‐resolved x‐ray photoelectron spectroscopy (XPS) provide more reliable information.

authors

• Tapping, RL
• Davidson, RD
• Jackman, TE
• Davies, John Arthur

status

• published 

publication date

• May 1988

has subject area

• 0204 Condensed Matter Physics (FoR)
• 0306 Physical Chemistry (incl. Structural) (FoR)
• Applied Physics (Science Metrix)

published in

• Surface and Interface Analysis  Journal

keywords

• Chemistry
• Chemistry, Physical
• Physical Sciences
• Science & Technology

Digital Object Identifier (DOI)

• 10.1002/sia.740110806

start page

• 441

end page

• 446

volume

• 11

issue

• 8