UV‐Induced Multilevel Current Amplification Memory Effect in Zinc Oxide Rods Resistive Switching Devices

Abstract Zinc oxide (ZnO) devices represent an alternative in the semiconductor technology for their application in resistive switching memory devices and ultraviolet (UV) photodetectors due to their chemical and electrical properties. The multilevel current amplification of ZnO rods RRAM devices induced by UV light illumination is reported here for the first time. The resistive switching mechanism underlying in this type of devices is …