Bonding of P-Si/N-INP Wafers Through Surface Activated Bonding Method at Room Temperature

Bonding between p-Si and n-InP has successfully been performed through surface activated bonding (SAB) method at room temperature. Consistent results between XPS and AFM investigations show that a weak phase of Indium is generated on the InP. Due to this weak phase, the samples were debonded from the interface of In/InP, but not across the bonded interface of Si and In. Typical pn junction current-voltage behavior indicates no strong interface layer that can withstand the flow of current through the interface. Sputtering time dependent interface current is found. Beam energy of Ar-FAB is found to have a substantial effect on the interface current of p-Si/n-InP.