Conference
Combined Process for Wafer Direct Bonding by Means of the Surface Activation Method
Abstract
A sequential plasma activation process consisting of oxygen reactive ion etching (RIE) plasma and nitrogen radical activation is proposed for wafer direct bonding at room temperature. The Si wafer surface is activated by oxygen RIE plasma and subsequently exposed to nitrogen radicals. The activated wafers by the two-step process were brought into contact in air followed by keeping them in air for 24 h. The wafers were bonded throughout the …
Authors
Suga T; Kim TH; Howlader MMR
Volume
1
Pagination
pp. 484-490
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
January 1, 2004
DOI
10.1109/ectc.2004.1319383
Name of conference
2004 Proceedings. 54th Electronic Components and Technology Conference (IEEE Cat. No.04CH37546)