Journal article
Formation Energies of Antiphase Boundaries in GaAs and GaP: An ab Initio Study
Abstract
Electronic and structural properties of antiphase boundaries in group III-V semiconductor compounds have been receiving increased attention due to the potential to integration of optically-active III-V heterostructures on silicon or germanium substrates. The formation energies of {110}, {111}, {112}, and {113} antiphase boundaries in GaAs and GaP were studied theoretically using a full-potential linearized augmented plane-wave …
Authors
Rubel O; Baranovskii SD
Journal
International Journal of Molecular Sciences, Vol. 10, No. 12, pp. 5104–5114
Publisher
MDPI
DOI
10.3390/ijms10125104
ISSN
1661-6596