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Silicon nanowire ion sensitive field effect...
Journal article

Silicon nanowire ion sensitive field effect transistor with integrated Ag/AgCl electrode: pH sensing and noise characteristics

Abstract

We have fabricated Si nanowire (SiNW) based ion-sensitive field effect transistors (ISFETs) for biosensing applications. The ability to prepare a large number of sensors on a wafer, the use of standard silicon microfabrication techniques resulting in cost savings, and potential high sensitivity are significant advantages in favor of nanoscale SiNW ISFETs. The SiNW ISFETs with embedded Ag/AgCl reference electrode were fabricated on a standard …

Authors

Kim S; Rim T; Kim K; Lee U; Baek E; Lee H; Baek C-K; Meyyappan M; Deen MJ; Lee J-S

Journal

Analyst, Vol. 136, No. 23, pp. 5012–5016

Publisher

Royal Society of Chemistry (RSC)

Publication Date

2011

DOI

10.1039/c1an15568g

ISSN

0003-2654