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Very low-voltage operation capability of...
Conference

Very low-voltage operation capability of complementary metal-oxide-semiconductor ring oscillators and logic gates

Abstract

Operation of complementary metal-oxide-semiconductor (CMOS) logic gates at low supply voltages down to 100mV and ring oscillators down to 67mV is experimentally investigated. The measured voltage transfer characteristics of CMOS inverters and logic gates are explained using the subthreshold operation of MOS transistors. Robust control of ring oscillators allows for a tuning range of six decades in frequency with excellent sensitivity as low as …

Authors

Deen MJ; Naseh S; Marinov O; Kazemeini MH

Volume

24

Pagination

pp. 763-769

Publisher

American Vacuum Society

Publication Date

May 1, 2006

DOI

10.1116/1.2167973

Conference proceedings

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Issue

3

ISSN

0734-2101