Point Defect Characterization of Zn- and Cd-Based Semiconductors Using Positron Annihilation Techniques

AbstractA study of point defects in II-VI compound semiconductors was undertaken and has revealed that open volume defects are present in a wide variety of these samples. Zn-based binary compounds contain primarily neutral divacancy defects in concentrations in the mid 1016 cm−3. CdTe samples contain neutral monovacancy sized defect complexes in the high 1016 cm−3 range. When a small fraction of Zn or Se is alloyed into CdTe the defect profile changes dramatically to one dominated by divacancy sized defects at roughly half the original concentration.

Point Defect Characterization of Zn- and Cd-Based Semiconductors Using Positron Annihilation Techniques Conferences