Proton Irradiation Induced Defects in 611- and 4H-SiC Conferences

abstract

• AbstractAnnealing of defects in proton irradiated bulk n-type 6H- and semi-insulating 4H-SiC has been investigated by positron lifetime spectroscopy and Doppler-broadening measurements. For the n-type sample radiation induced defects in dependence of the proton fluence were studied. Three or four annealing stages were found, during which the formation of larger defect complexes could be observed.

authors

• Puff, Werner
• Balogh, Adam G
• Mascher, Peter

status

• published 

publication date

• 1998

published in

• Materials Research Society Symposium - Proceedings  Journal

presented at event

• Symposium on Microstructural Processes in Irradiated Materials, at the 1998 Fall MRS Meeting  Conference

keywords

• Materials Science
• Materials Science, Ceramics
• Materials Science, Multidisciplinary
• Metallurgy & Metallurgical Engineering
• Nuclear Science & Technology
• POINT-DEFECTS
• POSITRON-ANNIHILATION
• SILICON-CARBIDE
• Science & Technology
• Technology
• VACANCY-TYPE DEFECTS

Digital Object Identifier (DOI)

• 10.1557/proc-540-177

International Standard Book Number (ISBN) 10

• 1-55899-446-7

start page

• 177

end page

• 182

volume

• 540