Vacancy-Type Defects in as-Grown and Proton-Irradiated 6H-SiC Conferences

abstract

• ABSTRACTAnnealing of defects in as-grown and proton irradiated bulk n- and p-type 6H-SiC has been investigated by positron lifetime spectroscopy and Doppler-broadening measurements. The grown-in defects do not anneal out until 1600 °C, whereas the radiation induced defects show three main annealing stages well below this temperature. During annealing, the formation of larger defect complexes can be observed.

authors

• Puff, Werner
• Mascher, Peter
• Balogh, Adam G

status

• published 

publication date

• 1998

published in

• Materials Research Society Symposium - Proceedings  Journal

presented at event

• Symposium on Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature  Conference

keywords

• Engineering
• Engineering, Electrical & Electronic
• Materials Science
• Materials Science, Characterization & Testing
• Materials Science, Coatings & Films
• Materials Science, Multidisciplinary
• Physical Sciences
• Physics
• Physics, Applied
• Science & Technology
• Technology

Digital Object Identifier (DOI)

• 10.1557/proc-512-261

International Standard Book Number (ISBN) 10

• 1-55899-418-1

start page

• 261

end page

• 266

volume

• 512