publication venue for
- Effect of noble gas plasmas on the growth of InP by gas-source molecular beam epitaxy 1996
- Implantation isolation in n-type InP bombarded with He+ and B+ (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 294-297, 1995) 1996
- Ion implantation induced compositional intermixing in the InGaAs/InP MQW system for wavelength shifted waveguides 1996
- Volatile products and endpoint detection in reactive ion etching of III-V compounds with a broad beam ECR source (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 179-182, 1995) 1996