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Lasing and high intensity photoluminescence in...
Journal article

Lasing and high intensity photoluminescence in InGaAsGaAs strained layer superlattices

Abstract

A pulsed nitrogen laser was used to excite lasing and photoluminescence (PL) in InGaAsGaAs strained-layer superlattices (SLS). At moderate excitation intensities the PL spectrum consisted of a single narrow peak. But at higher intensities a second peak, up to 16 meV lower in energy, was also seen due to optical gain induced in the waveguiding SLS structure. In a laser geometry gain could also be seen at an intermediate wavelength, about 4 meV …

Authors

Hunt NEJ; Jessop PE

Journal

Superlattices and Microstructures, Vol. 4, No. 6, pp. 671–675

Publisher

Elsevier

Publication Date

1 1988

DOI

10.1016/0749-6036(88)90193-0

ISSN

0749-6036