Defect-enhanced photo-detection at 1550 nm in a silicon waveguide formed via LOCOS

We present the integration of a defect-enhanced photodiode with high sensitivity at 1550 nm with a silicon waveguide structure formed by the LOCOS (LOCal Oxidation of Silicon) process. The defects are introduced through a 4 MeV Si+ implantation followed by thermal treatment at 200?500 ?C to form a sub-bandgap photo-response. A 100 nm polycrystalline silicon layer forms a self-aligned contact to the top of the ridge waveguide and provides …