Polarization dependence of the Si K-edge X-ray absorption spectra of Si-Ge atomic layer superlattices

The polarization dependence of the Si K-edge X-ray absorption spectra of several [(Si)m(Ge)n]p atomic layer superlattice (ALS) materials grown on both Si(100) and Ge(100) have been investigated using plane polarized synchrotron radiation. These spectra exhibit sharp, polarization dependent, Si ls → conduction band (CB) resonance features which are absent in the spectrum of amorphous Si (a-Si). Subtraction of the spectrum of a-Si from that of …