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Si 1 s x-ray absorption spectra of epitaxial Si–Ge...
Conference

Si 1 s x-ray absorption spectra of epitaxial Si–Ge atomic layer superlattice and alloy films

Abstract

The Si 1s (K-shell) x-ray absorption spectra of several [(Si)m(Ge)n]p atomic layer superlattices (ALS) and a range of SixGe1−x alloy thin films grown epitaxially on both Si(100) and Ge(100) have been investigated using plane-polarized synchrotron radiation. The near-edge spectral features of ALS and alloy samples with similar (average) chemical composition are remarkably similar. The spectra of both the strained ALS and alloy samples contain …

Authors

Hitchcock AP; Tyliszczak T; Rocco MLM; Francis JT; Urquhart SG; Feng XH; Lu ZH; Baribeau J-M; Jackman TE

Volume

12

Pagination

pp. 1142-1147

Publisher

American Vacuum Society

Publication Date

July 1, 1994

DOI

10.1116/1.579181

Conference proceedings

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Issue

4

ISSN

0734-2101