Conference
Application of an in situ hydrogen plasma to the epitaxial regrowth of InP grown by molecular beam epitaxy
Abstract
The application of an in situ electron cyclotron resonance (ECR) generated H plasma to produce high quality growth interrupted interfaces on both n- and p-type InP has been investigated. The H plasma was applied to epitaxial layers as well as to surfaces that were passivated by sulfur or an UV/ozone oxide. An in situ reflection high energy electron diffraction (RHEED) and a vacuum-linked Auger spectrometer were used to determine surface …
Authors
Hofstra PG; Thompson DA; Robinson BJ; Streater RW
Volume
11
Pagination
pp. 985-988
Publisher
American Vacuum Society
Publication Date
May 1, 1993
DOI
10.1116/1.586906
Conference proceedings
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
Issue
3
ISSN
2166-2746