Conference
In-situ monitoring of electron cyclotron resonance plasma chemical vapour deposition of hydrogenated silicon nitride films
Abstract
Hydrogenated silicon nitride (SiN:H) films were deposited by electron cyclotron resonance plasma chemical vapour deposition on Si and InP substrates. A non-corrosive organic compound, liquid at room temperature and stable in air, CONSI™ 4000 (SiH2(C4H9)2), was used as the precursor for the silicon. Depositions were successfully made at relatively low substrate temperatures, below 300°C. The effects of the processing conditions on the plasma …
Authors
Boumerzoug M; Kruzelecky RV; Mascher P; Thompson DA
Volume
59
Pagination
pp. 77-81
Publisher
Elsevier
Publication Date
October 1993
DOI
10.1016/0257-8972(93)90057-u
Conference proceedings
Surface and Coatings Technology
Issue
1-3
ISSN
0257-8972