High Resistivity in N-Type InP and InGaAsP by He+ Ion Induced Amorphization.

Changes in the resistivity of n-type InP and InGaAsP by He+ ion implantation have been investigated at implant temperatures of 60–523K. The highest resistivities are achieved at the lowest temperatures under the conditions where the dose is sufficient to render the implanted region amorphous, as indicated by Rutherford backscattering/channeling measurements. Anneal data indicates that the high resistivities achieved via amorphization are stable to higher temperatures than when the samples remain crystalline after implantation.