Conference
Spacer design to improve the breakdown voltage of InAlAs-InGaAs HEMTs
Abstract
The work presented in this paper shows that the use of a mixed InAlAs/InP spacer rather than a conventional InAlAs spacer considerably improves the breakdown voltage of the devices in taking advantage of the large valence band offset of the InP/InGaAs heterojunction (0.42 eV). Also, this structure is entirely lattice matched thus avoiding the growth problems associated with strained layers. Furthermore, the noise associated with this device has …
Authors
Tardy J; Letartre X; Viktorovitch P; Gendry M; Thompson DA; Simmons JG
Pagination
pp. 420-423
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
January 1, 1995
DOI
10.1109/iciprm.1995.522169
Name of conference
Seventh International Conference on Indium Phosphide and Related Materials