Investigation of a molecular beam epitaxy regrowth procedure using an in-situ H/sub 2/ plasma probed with an InP/InGaAs/InP quantum well

In this work, we use a single InGaAs quantum well structure to investigate the effect of a bias potential applied to the substrate during the H-plasma exposure and of annealing performed after the H treatment for growth on InP surfaces. Assessment of the optical quality of the regrowth interface has been achieved by photoluminescence (PL) measurements at 300 and 11 K and photoluminescence excitation spectroscopy (PLE) at 11 K.