Conference
Growth of ternary and quaternary compounds on non-planar InP substrates
Abstract
We have previously shown how InP, InGaAs and InGaAsP deposited onto etched DFB gratings under the same conditions act differently and here we will show both how the atomic concentrations change in deposited InGaAs and InGaAsP layers with position above the grating and how the total incorporation rate changes when compared to growth on a planar substrate.
Authors
Mullan CA; Robinson BJ; Thompson DA; Weatherly GC
Pagination
pp. 515-516
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
January 1, 1996
DOI
10.1109/iciprm.1996.492296
Name of conference
Proceedings of 8th International Conference on Indium Phosphide and Related Materials