Conference
Improved structural and optical properties of InGaAsP grown on InP by ECR plasma-assisted epitaxy
Abstract
In this work, plasma-assisted epitaxy is be shown to be an alternative technique for reducing the lateral composition modulation (LCM) in thick InGaAsP layers and single quantum wells (QWs) grown on (100) InP substrates.
Authors
LaPierre RR; Robinson BJ; Thompson DA
Pagination
pp. 517-520
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
January 1, 1996
DOI
10.1109/iciprm.1996.492297
Name of conference
Proceedings of 8th International Conference on Indium Phosphide and Related Materials