A three-terminal N-channel InGaAsPInP-based double heterostructure optoelectronic switch (DOES)

In this work, we give the first report on the physical and functional characteristics of a three-terminal InGaAsP–InP-based double heterostructure optoelectronic switch (DOES) device. In this device, electrical contact is made to the emitter, collector, and active layers while optical input is made via a window in the emitter contact. The DC current–voltage characteristic of a 100 μm × 80 μm device exhibits a switching voltage of 6.6 V with an …