Conference
Characterization of defects in InGaAsN grown by molecular-beam epitaxy
Abstract
Bulk layers of InGaAsN on GaAs and GaAs/InGaAsN/GaAs quantum wells with small nitrogen concentration ($\leq$ 2% N) have been grown by gas source molecular beam epitaxy with a radio frequency discharge N source. The material has been characterized using x-ray diffraction, secondary ion mass spectrometry (SIMS), photoluminescence (PL) and Hall effect measurement with the intention of understanding and overcoming the mechanism responsible for the …
Authors
Fleck A; Thompson DA; Robinson BJ; Yuan L
Pagination
pp. 280-283
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
January 1, 2001
DOI
10.1109/iciprm.2001.929112
Name of conference
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)