Characterization of defects in InGaAsN grown by molecular-beam epitaxy

Bulk layers of InGaAsN on GaAs and GaAs/InGaAsN/GaAs quantum wells with small nitrogen concentration ($\leq$ 2% N) have been grown by gas source molecular beam epitaxy with a radio frequency discharge N source. The material has been characterized using x-ray diffraction, secondary ion mass spectrometry (SIMS), photoluminescence (PL) and Hall effect measurement with the intention of understanding and overcoming the mechanism responsible for the optical and electrical defects in the material. Both the PL and electrical performance of InGaAsN can be improved with thermal annealing.